International Business Machines Corporation

Other

Delores A Bennett

Shahab Siddiqui

Darryl D Restaino

Hsueh-Chung Chen

John Anthony Fitzsimmons

Erdem Kaltalioglu

Jeffrey Curtis Hedrick

Tong-Yu Chen

Hongwen Yan

Christy Sensenich Tyberg

Chienfan Yu

Gwo-Shii Yang

James Patrick Norum

Chiung-Sheng Hsiung

John Fritche

Chih-Chien Liu

Chih-Chih Liu

A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.

Method for reworking low-k polymers used in semiconductor structures

Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.

Method for eliminating via resistance shift in organic ILD

A process of etching an oxide layer placed over a nitride layer of a substrate with high selectivity. The process comprises plasma etching the oxide layer of the substrate with a carbon and fluorine-containing gas and with a nitrogen-containing gas. A Si,N,species is formed which is deposited on the nitride layer substantially in equilibrium with etching of the nitride layer.

Selective dry etch of a dielectric film

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Poughkeepsie, NY, United States of America

Delores A Bennett