Visteon Global Technolgoies, Inc.

Visteon Global Tech., Inc

Soltrium Advanced Materials Technology

Intel Corporation

Adeia Semiconductor Bonding Technologies Inc.

Ford Motor Company Limited

Soltrium Technology, Ltd.

Soltrium Corp.

Sobtrium Advanced Materials Technology, Ltd.

Delin Li

Brenda Joyce Nation

Lakhi Nandlal Goenka

Achyuta Achari

Robert Edward Belke

Jay DeAvis Baker

Thomas Bernd Krautheim

Xiaoli Liu

Andrew Zachary Glovatsky

Mohan R Paruchuri

Fengzhen Sun

Vivek Amir Jairazbhoy

Richard Keith McMillan

John Trublowski

Robert Joseph Gordon

Jie Zhang

Myron Lemecha

Zhong-You Joe Shi

Daniel Phillip Dailey

Charles Frederick Schweitzer

Edward Paul McLeskey

Yu Ngok Li

John W Smith

Masud Beroz

David Noel Light

Cuong Van Pham

Lawrence LeRoy Kneisel

Michael Warner

Hung-Ming Wang

Wen Shi

Marc Alan Straub

Jun Ming Hu

Ram S Raghava

Yen-Ping Ho

Michael Allen Howey

Alice Dawn Zitzmann

Michael Bednarz

Dennis Castillo

Ran Guo

Yu Li

An epoxy conductive paste is disclosed, based on 100 parts by total mass, comprising the following raw material components: 30˜81 parts of conductive particles, 16˜30 parts of epoxy, 0.2˜3 parts of acrylic, 1˜15 parts of reactive diluent, 1˜15 parts of toughening agent, 0.4˜5 parts of silane coupling agent, and 0.4˜5 parts of cationic curing agent; wherein, the conductive particles include conductive particles with a three-dimensional dendritic microstructure. The conductive paste of the disclosure has the characteristics of good conductivity, short curing time, strong adhesion, and capability for long-term operation at room temperature.

Epoxy conductive paste and preparation method and application thereof

A front-side conductive paste for a crystalline silicon solar cell chip is provided. The front-side conductive paste for a crystalline silicon solar cell chip includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent. The oxide etching agent contains at least 10-40% of MgO, 0.1-5% of PbO, and 5-30% of LiO based on 100% by mole, with the molar ratio of MgO:PbO being 10:5&#x2dc;40:0.1, and the mole ratio of MgO:LiO being 10:30&#x2dc;40:5. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

Conductive paste for semiconductor device and preparation method

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO; 8.0-15.0% of LiO; 9.0-20.0% of SiO; 5.0-15.0% of BiO; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

Front-side conductive paste for crystalline silicon solar cell, preparation method therefor, and solar cell

The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive paste composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb&#x2014;Te based crystalline compounds having a fixed melting temperature in a range of 440&#xb0; C. to 760&#xb0; C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

Method for manufacturing a front electrode of a semiconductor device

The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.

Reaction apparatus and method for manufacturing a CIGS absorber of a thin film solar cell

The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of prepare Pb&#x2014;Te&#x2014;O-based crystal corrosion binder characterized by melting temperatures in a range of 440&#xb0; C. to 760&#xb0; C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface.

Conductive paste for front electrode of semiconductor device and method of manufacturing thereof

An electrical component includes a substrate, a first integrated circuit attached to the substrate, a metal portion coupled to the first integrated circuit, and a second integrated circuit attached to the first integrated circuit. The metal portion is sandwiched between the first integrated circuit and the second integrated circuit.

Stacked package electronic device

A method of manufacturing a plurality of semiconductor chip packages and the resulting chip package assemblies. The method includes providing a circuitized substrate having terminals and leads. A first microelectronic element is arranged with the substrate and contacts on the microelectronic element are connected to the substrate. A conductive member is placed on top of the first microelectronic element and is used to support a second microelectronic element. The second microelectronic element is arranged with the conductive member in a top and bottom position. The second microelectronic element is then also connected by leads from contacts on the second microelectronic element to pads and terminals on the circuitized substrate. The conductive member is then connected to a third pad or set of pads on the substrate. An encapsulant material may be deposited so as to encapsulate the leads and at least one surface of the microelectronic elements. The encapsulant material is then cured thereby defining a composite of chip assemblies which may be singulated into individual chip packages.

Method of making assemblies having stacked semiconductor chips

A method for forming connections within a multi-layer electronic circuit boardwhich allows for the selective, efficient, and reliable interconnection between at least one conductive layer and a ground plane or layer.

Method for forming multilayer circuit board

A method is disclosed for making a microelectronic package. A material is applied to a first major surface of a microelectronic element to reduce the heights of protrusions projecting from the first major surface. The microelectronic element is assembled to a microelectronic component. A method of forming protrusions and an assembly incorporating the microelectronic element having protrusions is also disclosed.

Microelectronic assemblies having low profile connections

A methodfor making a multi-layer electronic circuit boardhaving electroplated apertureswhich may be selectively and electrically isolated from electrically grounded memberand further having selectively formed air bridges and/or crossover memberswhich are structurally supported by material, and further having certain exposed connection surfaces, selectively and electrically connected to certain electrically conductive members, and

Circuit board and a method for making the same

Assemblies having stacked semiconductor chips and methods of making same

Growing community of inventors

San Jose, CA, United States of America

Delin Li