Semiconductor Manufacturing International (Shanghai) Corporation

Semiconductor Manufacturing International (Beijing) Corporation

Dekui Qi

Fei Li

Xuanjie Liu

Zheng Chen

Haifang Zhang

Fucheng Chen

A semiconductor device includes a device substrate having a dielectric layer and a metal wire in the dielectric layer, a first opening on the metal wire and having a bottom at a depth the same as an upper surface of the metal wire, a first insulation layer including a first color filter material on sidewalls of the first opening, a second opening disposed at opposite ends of the semiconductor device and having a bottom at a depth the same as the depth of the bottom of the first opening, and a second insulation layer including a second color filter material on sidewalls of the second opening. The first opening is for leading out the metal wire to a pad. The second opening is disposed along scribe lines. The semiconductor device simplifies the process of drawing out and isolating the pads and satisfies technical requirements of a back seal ring.

Method and apparatus for backside illumination sensor

A method of fabricating a spiral inductor includes providing a substrate having a top surface and a bottom surface, forming a plurality of through holes aligned in a vertical plane and spaced apart from each other, forming a metal interconnect structure having at least one top metal layer on the top surface of the substrate, the metal interconnect structure configured to connect to a top portion of the through holes, and forming a redistribution layer having at least a bottom layer on the bottom surface of the substrate. The redistribution layer is configured to connect to a bottom portion of the through holes to form a spiral structure.

Method of manufacturing a vertical inductor

A spiral inductor formed in a vertical plane relative to a planar surface of a substrate includes a plurality of through holes disposed in the vertical plane and spaced apart from each other, a metal interconnect structure on the top surface, and a redistribution layer on the bottom surface and having at least one bottom metal layer. The metal interconnect structure and the redistribution layer are connected to each other through the plurality of through holes to form the vertical spiral inductor. The thus formed vertical spiral inductor has a significantly reduced surface area comparing with lateral spiral inductors.

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Shanghai, China

Dekui Qi