Industrial Technology Research Institute

Deh-Ming Shyu

Yi-Sha Ku

Sen-Yih Chou

Wei-Te Hsu

Shu-Ping Dong

Tsung-Hsin Lin

Chia-Lin Wu

Chiun-Lern Fu

Mao-Hong Lu

Hsin-Yih Lin

Chang-Hai Sung

According to one embodiment of a method for measuring a stacking overlay error, the method may use a differential interference contrast microscope system to measure a stacking overlay mark and focus on one overlay mark of a lower layer overlay mark and an upper layer overlay mark when measuring the stacking overlay mark. Then, the method uses an image analysis scheme to obtain an image of the stacking overlay mark from a photo-detector and obtains a first reference position of the lower layer overlay mark in a direction and a second reference position of the upper layer overlay mark in the direction from the image; and computes the stacking overlay error in the direction according to the first and the second reference positions.

Method and system for measuring a stacking overlay error by focusing on one of upper and lower layer overlay marks using a differential interference contrast microscope

A measurement system is provided to measure a hole of a target, including a light source generation unit, a capturing unit and a processing unit. The light source generation unit generates a light source and focuses the light source on a plurality of different height planes. The capturing unit captures a plurality of images scattered from the plurality of different height planes. The processing unit obtains boundaries of the hole on the plurality of different height planes according to the plurality of images, samples image intensities of different azimuth angles on the boundaries of the hole on each of the plurality of different height planes to generate a plurality of sampling values, and develops a sidewall image of the hole according to the plurality of sampling values, the plurality of different height planes and the different azimuth angles.

Measurement systems and measurement methods

A method for measuring a via bottom profile is disclosed for obtaining a profile of a bottom of a via in a front side of a substrate. In this method, an infrared (IR) light source is transmitted from the back of the substrate to the bottom of the via through an objective by using an IR-microscope, and lights scattered from the bottom of the via are acquired by an image capturing device to generate an image, where the image displays a diameter (2E) of the via bottom profile and a diameter (2E) of a maximum receivable base area of the via for the IR-microscope. Thereafter, by using an elliptic equation, a minor axis radius thereof (E) is obtained, and thus the via bottom profile is obtained from a radius (E) of the via bottom profile and the minor axis radius (E) of the elliptic equation.

Method for measuring via bottom profile

The present invention provides a scatterfield microscopical measuring method and apparatus, which combine scatterfield detecting technology into microscopical device so that the microscopical device is capable of measuring the sample whose dimension is under the limit of optical diffraction. The scatterfield microscopical measuring apparatus is capable of being controlled to focus uniform and collimated light beam on back focal plane of an objective lens disposed above the sample. By changing the position of the focus position on the back focal plane, it is capable of being adjusted to change the incident angle with respect to the sample.

Scatterfield microscopical measuring method and apparatus

A method and an apparatus are disclosed for scatterfield microscopical measurement. The method integrates a scatterometer and a bright-field microscope for enabling the measurement precision to be better than the optical diffraction limit. With the aforesaid method and apparatus, a detection beam is generated by performing a process on a uniform light using an LCoS (liquid crystal on silicon) or a DMD (digital micro-mirror device) which is to directed to image on the back focal plane of an object to be measured, and then scattered beams resulting from the detection beam on the object's surface are focused on a plane to form an optical signal which is to be detected by an array-type detection device. The detection beam can be oriented by the modulation device to illuminate on the object at a number of different angles, by which zero order or higher order diffraction intensities at different positions of the plane at different incident angles can be collected.

Method and apparatus for scatterfield microscopical measurement

A reflective scatterometer capable of measuring a sample is provided. The reflective scatterometer includes a paraboloid mirror, a light source, a first reflector, a second reflector and a detector. The paraboloid mirror has an optical axis and a parabolic surface, wherein the sample is disposed on the focal point of the parabolic surface and the normal direction of the sample is parallel with the optical axis. A collimated beam generated from the light source is reflected by the first reflector to the parabolic surface and then is reflected by the parabolic surface to the sample to form a first diffracted beam. The first diffracted beam is reflected by the parabolic surface to the second reflector and is then reflected by the second reflector to the detector.

Reflective scatterometer

A structure for overlay measurement is provided in the present invention, using the diffraction characteristics on the boundary portion between two microstructures formed on each of two material layers. The optical intensity distribution on the boundary portion between microstructures formed on the two overlaid material layers respectively are measured by an optical microscope to obtain the overlay error between the two overlaid material layers. In addition, the present invention also provides a method for overlay measurement using the structure for overlay measurement, wherein a merit relation based on the optical intensity distribution on the boundary portion between different microstructures is determined. The merit relation can be used to analyze the overlay error to improve the efficiency and accuracy of on-line error measurement.

Structure and method for overlay measurement

The present invention discloses a dual-lens hybrid diffractive/refractive imaging system comprising: a first lens including a concave surface and a convex surface; and the second lens including a convex surface and a concave surface. The concave surface of the first lens is an objective surface facing the object. The convex surface faces the convex surface of the second lens, while the concave surface of the second lens faces the charge-coupled device (CCD) through a filter. Any surface of the first lens and the second lens is spheric or aspheric. Moreover, the imaging system comprises at least one diffractive surface, referred to as a hybrid diffractive/refractive surface, formed on any surface of the two lenses. Therefore, aberration is eliminated and image quality is improved without increasing the number of lenses.

Growing community of inventors

Miaoli County, Taiwan

Deh-Ming Shyu