International Business Machines Corporation

Globalfoundries Inc.

Deepal Wehella-Gamage

Toshiaki Kirihata

Babar Ali Khan

Xinhui Wang

Ricardo Alves Donaton

Chengwen Pei

Subramanian Srikanteswara Iyer

Edward P Maciejewski

Viorel C Ontalus

Krishnan Santhana Rengarajan

Sheikh Sabiq Chishti

Kasun Anupama Gardiye Punchihewa

An integrated FinFET and deep trench capacitor structure and methods of manufacture are provided. The method includes forming deep trench capacitor structures in a silicon on insulator (SOI) wafer. The method further includes forming a plurality of composite fin structures from a semiconductor material of the SOI wafer and conductive material of the deep trench capacitor structures. The method further includes forming a liner over the deep trench capacitor structures including the conductive material of the deep trench capacitor structures. The method further includes forming replacement gate structures with the liner over the deep trench capacitor structures protecting the conductive material during deposition and etching processes.

Semiconductor structures with deep trench capacitor and methods of manufacture

A method of forming a contact to mitigate punch through in SOI substrates is disclosed. The method may include providing an active region in SOI substrate isolated from another region in the SOI substrate by a shallow trench isolation (STI), the active region having a silicided source/drain region adjacent the STI. A spacer may be formed at an edge of the silicided source/drain region adjacent to the STI. A contact etch stop layer (CESL) may be deposited over the spacer and a dielectric layer over the CESL. A contact opening may be formed to the source/drain region through the CESL and the dielectric layer. A portion of the contact opening is positioned over the spacer such that the spacer prevents punch through into the STI. A contact may then be formed in the contact opening.

Contact punch through mitigation in SOI substrate

The present disclosure generally relates to a wiring structure for a fuse component and corresponding methods of fabrication. A wiring structure for a fuse component according to the present disclosure can include: a first electrical terminal embedded within a doped conductive layer, the doped conductive layer being positioned between two insulator layers of an integrated circuit (IC) structure; a dielectric liner positioned between the first electrical terminal and the doped conductive layer; a second electrical terminal embedded within the doped conductive layer; wherein each of the first electrical terminal and the second electrical terminal are further embedded in one of the two insulator layers, and the dielectric liner is configured to degrade upon becoming electrically charged.

Wiring structure for trench fuse component with methods of fabrication

A method of generating a default state in an embedded Multi-Time-Programmable-Read-Only-Memory for a high-performance logic technology consisting of a plurality of memory cells featuring a charge trap, each having a first and a second NMOS transistor. The first and second NMOS transistors use a different mask having different threshold voltages. The second NMOS threshold voltage is adjusted to a middle point of the threshold voltage of the first NMOS with or without trapping the charge. When the charge is not trapped by the first NMOS, the NMOS threshold is lowered to the second NMOS, thereby generating a default state. When the charge is trapped to the first NMOS, the NMOS threshold is higher than the second NMOS, generating a second state. Moreover, a reference voltage generation can use two arrays, each consisting of memory cells and reference memory cells such that a default state can be generated for a single transistor per memory cell.

Method for defining a default state of a charge trap based memory cell

Embodiment of the present invention provides a method of forming transistors such as narrow channel transistors. The method includes creating a transistor region in a substrate; the transistor region being separated from rest of the substrate, by one or more shallow trench isolation (STI) regions formed in the substrate, to include a channel region, a source region, and a drain region; the STI regions having a height higher than the transistor region of the substrate; and the channel region having a gate stack on top thereof; forming spacers at sidewalls of the STI regions above the transistor region; creating recesses in the source region and the drain region with the spacers preserving at least a portion of material of the substrate underneath the spacers along sidewalls of the STI regions; and epitaxially growing source and drain of the transistor in the recesses.

Growing community of inventors

Newburgh, NY, United States of America

Deepal Wehella-Gamage