Olin Corporation

Fujifilm Planar Solutions, LLC

Planar Solutions, LLC

Arch Specialty Chemicals, Inc.

Fujifilm Electronic Materials U.s.a., Inc.

Advanced Interconnect Technologies Limited

Advanced Technology Interconnect Incorporated

Deepak Mahulikar

Paul R Hoffman

Jeffrey S Braden

Anthony M Pasqualoni

Arvind Parthasarathi

Jacob Crane

Bin Hu

Richard Wen

Eugene Shapiro

Sheldon H Butt

Brian Mravic

Narendra N Singhdeo

Saeed H Mohseni

Michael J Pryor

Julius C Fister

Andrew J Brock

James M Popplewell

Abhudaya Mishra

Satyam C Cherukuri

Satish K Jalota

Derek E Tyler

Henry J Halverson

German J Ramirez

Hyungjun Kim

Luling Wang

George A Brathwaite

Brian E O'Donnelly

Minae Tanaka

Liqing Wen

Dexin Liang

James McDonough

Abid A Khan

Efraim Sagiv

Laura John

Michael A Holmes

Tamas Varga

Ken A Delbridge

Gert R M Moyaerts

Nichole R Koontz

Wen-Hung Chang

Abhiskek Singh

Shih-Pin Chou

Richard J Jenkins

Gert Moyaerts

Jeffrey M Schlater

Yuhu Wang

Gerald Noel Violette

Joseph Winter

John F Breedis

Harvey P Cheskis

Edward F Smith

Frank N Mandigo

Szuchain F Chen

George J Muench

Stephen P Noe

Doanh D Bui

Barry C Johnson

Brian Mravic, Deceased

Elizabeth K Gramm

Gerald N Violette

Richard McNabb

Larry A LaFollette

Francis S Jewell

Dawit Solomon

Peter W Robinson

The disclosure features a system that includes a plurality of material tanks, each of which includes at least one material for forming a chemical composition and includes a first recirculation loop; at least one mixing tank in which the materials from the material tanks are mixed to form a chemical composition, the mixing tank including a second recirculation loop; and at least one holding tank configured to continuously receive the chemical composition from the mixing tank, the holding tank including a third recirculation loop. The system may further include a plurality of fluid flow controller units and be configured to form material and chemical composition flows in an in-process steady state.

Fluid processing systems including a plurality of material tanks, at least one mixing tank, at least one holding tank, and recirculation loops

CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO) compounds that optimize various chemical reactions occurring in the slurry chemistry at elevated polishing temperatures on the wafer surface, such that removal rate variation within an individual wafer is &#x3c;10%.

Elevated temperature CMP compositions and methods for use thereof

The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.

Reduction in large particle counts in polishing slurries

This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.

Advanced fluid processing methods and systems

The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKa)&#x3c;pKa&#x3c;18 (pKa)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pH) by the following equation: pKa+6&#x3c;pH&#x3c;pKa&#x2212;6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.

Polishing compositions and methods for polishing cobalt films

A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 7400 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.

Homogeneous blending

The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.

Composition for advanced node front-and-back-end of line chemical mechanical polishing

Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure, a plurality of filter housings disposed substantially within the movable enclosure, and a stand disposed within the enclosure. The filter housings are in fluid communication with one another. Each filter housing defines an elongate path and is configured to support a respective filter along the elongate flow path to filter a substantially continuous flow of fluid. The stand supports each filter housing such that the elongate flow path of each filter housing is substantially parallel to a vertical axis, wherein each filter housing is independently rotatable, relative to the stand.

Fluid processing

Composition for advanced node front-and back-end of line chemical mechanical polishing

A method for producing and using an ultrapure colloidal silica dispersion is disclosed. The ultrapure colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and less than 2 ppm residual alcohol. The method comprises dissolving a fumed silica in an aqueous solvent comprising an alkali metal hydroxide to produce an alkaline silicate solution, removing the alkali metal via ion exchange to generate a silicic acid solution, adjusting temperature, concentration and pH of said silicic acid solution to values sufficient to initiate nucleation and particle growth, and cooling the silicic acid solution at a rate sufficient to produce the colloidal silica dispersion.

Ultrapure colloidal silica for use in chemical mechanical polishing applications

The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Highly dilutable polishing concentrates and slurries

The present invention provides new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. The present invention also discloses processes for manufacturing new hydrate forms of triazole, triazole alkaline salt, and alkali-doped 1,2,4-triazole. The present invention also relates to compositions for different applications of new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. In addition, the present invention provides co-crystal form of triazole with acid, and methods of preparing thereof.

Hydrate forms of 1,2,4-triazole, processes for manufacture thereof, and compositions thereof

Growing community of inventors

Madison, CT, United States of America

Deepak Mahulikar