Intel Corporation

Deepak Goyal

Mayue Xie

Zhiyong Wang

Purushotham Kaushik Muthur Srinath

Mario Pacheco

Nilanjan Z Ghosh

Shuhong Liu

Chia-Pin Chiu

Peng T Li

Sergio Antonio Chan Arguedas

Zhimin Wan

Peng Li

Ken P Hackenberg

Yongmei Liu

Chengqing Hu

Hemachandar Tanukonda Devarajulu

Simranjit S Khalsa

Zhiguo Qian

Zuoguo Wu

Leonel R Arana

Rajendra C Dias

Phillip C Miller

Jin Yang

Manish Dubey

Changhua Liu

Kelly P Lofgreen

Jong-Ru Guo

Shripad Gokhale

Kevin T McCarthy

Bamidele Daniel Falola

Pilin Liu

Shenavia S Howell

Jieping Zhang

Richard Kenneth Brewer

Chandrashekara Shashank Kaira

Odissei Touzanov

Jacob Woolsey

Sivaseetharaman Pandi

Embodiments disclosed herein include thermoelectric cooling (TEC) dies for multi-chip packages. In an embodiment, a TEC die comprises a glass substrate and an array of N-type semiconductor vias and P-type semiconductor vias through the glass substrate. In an embodiment, conductive traces are over the glass substrate, and individual ones of the conductive traces connect an individual one of the N-type semiconductor vias to an individual one of the P-type semiconductor vias.

TEC-embedded dummy die to cool the bottom die edge hotspot

Embodiments include semiconductor packages. A semiconductor package includes first and second bottom dies on a package substrate, first top dies on the first bottom die, and second top dies on the second bottom die. The semiconductor package includes thermally conductive slugs on the first bottom die and the second bottom die. The thermally conductive slugs are comprised of a high thermal conductive material. The thermally conductive slugs are positioned directly on outer edges of top surfaces of the first and second bottom dies, inner edges of the top surfaces of the first and second bottom dies, and/or a top surface of the package substrate. The high thermal conductive material of the thermally conductive slugs is comprised of copper, silver, boron nitride, or graphene. The thermally conductive slugs may have two different thicknesses. The semiconductor package may include an active die and/or an integrated heat spreader with the pedestals.

Thermally conductive slugs/active dies to improve cooling of stacked bottom dies

Embodiments may relate to a microelectronic package that includes a lid coupled with a package substrate such that a die is positioned between the lid and the package substrate. The lid may include a heating element that is to heat an area between the lid and the die. Other embodiments may be described or claimed.

Integrated heat spreader (IHS) with heating element

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the second surface of the package substrate; a cooling apparatus thermally coupled to the second surface of the die; and a thermal interface material (TIM) between the second surface of the die and the cooling apparatus, wherein the TIM includes an indium alloy having a liquidus temperature equal to or greater than about 245 degrees Celsius.

Microelectronic assemblies including a thermal interface material

According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.

Method and device for failure analysis using RF-based thermometry

Embodiments may relate an x-ray filter. The x-ray filter may be configured to be positioned between an x-ray source output and a device under test (DUT) that is to be x-rayed. The x-ray filter may include at least 80% titanium (Ti) by weight. Other embodiments may be described or claimed.

X-ray filter

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.

Method of sample preparation using dual ion beam trenching

According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.

Method, device and system for non-destructive detection of defects in a semiconductor die

An electrical characterization and fault isolation probe can include a cable, a connector, and a coating over a portion of the cable. The cable can have a first conductor having a first impedance, a second conductor having a second impedance, and a dielectric surrounding the first conductor and electrically isolating the first conductor from the second conductor. The connector can physically couple to, and be in electrical communication with, the cable. The connector can include a first electrical communication pathway and a second electrical communication pathway. The first electrical communication pathway can be electrically isolated from the second electrical communication pathway. The first electrical communication pathway can be in electrical communication with the first conductor. The second electrical communication pathway can be in electrical communication with the second conductor. The connector can have a fifth impedance.

Integrated cable probe design for high bandwidth RF testing

A method, system and computer readable medium for determination of distance to an electrical fault within a device. A signal generator excites the device with an electrical input signal. The device comprises an open circuited electrical transmission line. A frequency domain analyzer analyzes part of the signal reflected from the device for determination of the locations of resonant frequency of the signal within the device. A computer calculates the distance to the fault within the device, based on the resonant frequency. The distance to the fault is one quarter wavelength distance into the device at the resonant frequency. A frequency sweeper sweeps the frequency of the input signal and repeated calculation of the distance to the fault made at a plurality of resonant frequencies during the frequency sweep confirms the distance to the fault by convergence of the result of the repeated calculations to substantially the same location.

Method of resonance analysis for electrical fault isolation

Disclosed herein are systems and methods for the characterization of transmission media, among other embodiments. For example, a system for characterizing a transmission medium may include: a waveform generator to generate an initial input waveform; waveform pre-processing circuitry to process the initial waveform to generate a processed input waveform for provision to the transmission medium, wherein the processed input waveform has a maximum amplitude greater than a maximum amplitude of the initial input waveform; and waveform output circuitry to display or store data representative of an initial output waveform, wherein the initial output waveform is output from the transmission medium as a reflection or transmission of the processed input waveform.

Characterization of transmission media

An apparatus comprises a signal generator circuit, a test probe, a signal sensor circuit, and a defect detection circuit. The signal generator circuit is configured to generate an impulse test signal having an impulse waveform and adjust a bandwidth of the impulse test signal. The test probe is electrically coupled to the signal generator circuit and configured to apply the impulse test signal to a device under test (DUT). The signal sensor circuit is configured to sense a conducted test signal produced by applying the impulse test signal to the DUT with the test probe. The defect detection circuit is configured to generate an indication of a defect in the DUT using the conducted test signal.

High power terahertz impulse for fault isolation

Some forms relate to an electronic assembly includes a first substrate that has a copper pad mounted to the first substrate. The electronic assembly further includes a second substrate that includes a copper redistribution layer mounted on the second substrate. The electronic assembly further includes bismuth-rich solder that includes 10-40 w.t. % tin. The bismuth-rich solder is electrically engaged with the copper pad and the copper redistribution layer. In some forms, the copper redistribution layer is another copper pad. The first substrate may include a memory die and the second substrate may include a logic die. In other forms, the first and second substrates may be part of a variety of different electronic components. The types of electronic components that are associated with the first and second substrates will depend on part on the application where the electronic assembly is be utilized (among other factors).

Electronic assembly using bismuth-rich solder

Embodiments include devices, systems and processes for using a combined confocal Raman microscope for inspecting a photo resist film material layer formed on the top surface of a layer of a substrate package, to detect border defects between regions of light exposed (e.g., cured) and unexposed (e.g., uncured) resist film material. Use of the confocal Raman microscope may provide a 3D photo-resist chemical imaging and characterization technique based on combining (1) Raman spectroscopy to identify the borders between regions of light exposed and unexposed resist along XY planes, with (2) Confocal imaging to select a Z-height of the XY planes scanned. Such detection provides fast, high resolution, non-destructive in-line inspection, and improves technical development of polymerization profiles of the resist film material.

Non-destructive 3-dimensional chemical imaging of photo-resist material

An apparatus comprises a contactless sense probe, an electro optic sensor module, and a test signal emitter circuit. The contactless sense probe includes a photoconductive switch and the signal bandwidth of the photoconductive switch is variable. The test signal emitter circuit configured to apply a test signal to a device under test (DUT) at a first location of the DUT, wherein the test signal includes a test signal frequency. The electro-optic sensor module is coupled to the contactless sense probe and configured to: generate an impulse signal at the contactless sense probe using an optical signal input to the first photoconductive switch; sense the test signal frequency in the impulse signal using the contactless sense probe at a second location of the DUT; and generate an indication of a defect in the DUT when the test signal frequency is undetected in the impulse signal.

Growing community of inventors

Phoenix, AZ, United States of America

Deepak Goyal