Varian Semiconductor Equipment Associates, Inc.

Texas Instruments Corporation

Qed Labs Inc.

Aviro LLC

Deepak Arabagatte Ramappa

Ludovic Godet

Richard L Guldi

Christopher R Hatem

Gangadhar Jogikalmath

Anthony Renau

Atul Gupta

Joseph C Olson

Julian G Blake

Timothy J Miller

Vikram Singh

Russell J Low

Nicholas P T Bateman

Kevin M Daniels

Kyu-Ha Shim

James Paul Buonodono

Nicholas Pt Bateman

Xianfeng Lu

Aaron L Frank

David Gonzalez, Jr

Srinavas Raghavan

John DeGenova

Benjamin B Riordon

Mona M Eissa

Ting Yiu Tsui

Asad Mahmood Haider

Patrick M Martin

Makarand Ramkrishna Kulkarni

Toan Tran

Jae Hong Park

Helen L Maynard

Frank D Poag

Chi-Chun Chen

Dennis P Rodier

Jeannette Michelle Jacques

Fareen Adeni Khaja

Laura M Matz

San Yu

Christopher Lyle Borst

Louis Steen

Rosa A Orozco-Teran

Thirumal Thanigaivelan

Srinivas Raghavan

Xiangfeng Lu

Compositions and articles with improved flame properties and fabric with improved melt dripping properties is disclosed. Reduced melt dripping can prevent injuries. Methods for making and using such compositions, articles and fabric are disclosed.

Articles with improved flame retardancy and/or melt dripping properties

Disclosed are polyurethane-based foams. The foams may have one or more vicrucidal/bactericidal agents. The foams may be used as filters that capture and/or inactivate viral particles, such as, virions associated with COVID-19. Also described are methods of making the foams and methods of using the foams.

Polyurethane-based materials

Compositions of injection molded articles, multilayer extruded articles, and 3D printed articles with improved flame properties and with improved melt dripping properties are disclosed. Improved flame resistant articles may be beneficial for a large number of injection molded parts, 3D printed parts, and extruded parts. Reduced melt dripping also may be beneficial for such applications. Methods for using such compositions, printed parts, molded parts, and extruded parts are disclosed.

The invention concerns methods and compositions for modifying a surface of a material by anchoring a surface modifying additive to a polymer matrix using an anchor molecule, wherein the surface modifying additive and the anchor molecule are both added to a melt phase of the polymer matrix.

Methods for surface modification of materials

Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

Methods of affecting material properties and applications therefor

Methods of forming a passivation layer on a workpiece are disclosed. These methods utilize a SiC forming polymer to form the passivation layer. In addition, while the polymer is being heated to form SiC, a second result, such as annealing of the underlying workpiece, or firing of the metal contacts is achieved. For example, the workpiece may be implanted prior to coating it with the polymer. When the workpiece is heated, SiC is formed and the workpiece is annealed. In another embodiment, a workpiece is coating with the SiC forming polymer and metal pattern is applied to the polymer. The firing of workpiece causes the metal contacts to form and also forms SiC on the workpiece.

Passivation layer for workpieces formed from a polymer

Techniques for manufacturing a device are disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for forming a solar cell. The method may comprise: implanting p-type dopants into a substrate via a blanket ion implantation process; implanting n-type dopants into the substrate via the blanket ion implantation process; and performing a first annealing process to form the p-type region and performing a second annealing process to form a second n-type region.

Techniques for manufacturing devices

A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic.

Plasma processing of workpieces to form a coating

A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

Apparatus and method for controllably implanting workpieces

Dark currents within a photosensitive device are reduced through improved implantation of a species during its fabrication. Dark currents can be caused by defects in the photo-diode device, caused during the annealing, implanting or other processing steps used during fabrication. By amorphizing the workpiece in the photo-diode region, the number of defects can be reduced thereby reducing this cause of dark current. Dark current is also caused by stress induced by an adjacent STI, where the stress caused by the liner and fill material exacerbate defects in the workpiece. By amorphizing the sidewalls and bottom surface of the trench, defects created during the etching process can be reduced. This reduction in defects also decreases dark current in the photosensitive device.

Dark currents and reducing defects in image sensors and photovoltaic junctions

Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material.

Ion-assisted direct growth of porous materials

A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.

Method and system for ion-assisted processing

Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device.

Method to enhance charge trapping

An improved method of creating LED arrays is disclosed. A p-type layer, multi-quantum well and n-type layer are disposed on a substrate. The device is then etched to expose portions of the n-type layer. To create the necessary electrical isolation between adjacent LEDs, an ion implantation is performed to create a non-conductive implanted region. In some embodiments, an implanted region extends through the p-type layer, MQW and n-type layer. In another embodiment, a first implanted region is created in the n-type layer. In addition, a second implanted region is created in the p-type layer and multi-quantum well immediately adjacent to etched n-type layer. In some embodiments, the ion implantation is done perpendicular to the substrate. In other embodiments, the implant is performed at an angle.

Isolation by implantation in LED array manufacturing

One embodiment of the present invention relates to a photolithography mask configured to form a metallization and via level utilizing a single lithography and etch process. More particularly, a photolithography mask comprising a mask via shape and one or more metal wire shapes is configured to produce both on-wafer metal lines and via levels. The mask via shape corresponds to an on-wafer photoresist via opening having a first critical dimension (CD). The one or more mask wire shapes correspond to one or more on-wafer photoresist wire openings respectively having a second CD. The first CD is larger than the second CD thereby providing a greater vertical etch rate for ILD exposed by the photoresist via opening than for ILD exposed by the one or more photoresist wire openings. This difference in CD results in a via extending vertically below the metal wire level, thereby making physical contact with underlying metal.

Simultaneous via and trench patterning using different etch rates

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Somerville, MA, United States of America

Deepak Arabagatte Ramappa