Micron Technology Incorporated

Deep Panjwani

Matthew J King

David A Kewley

Chandra S Tiwari

Yi Hu

Tom Jibu John

Xiaosong Zhang

Matthew Holland

Michael E Koltonski

A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures. Memory cells vertically extend through the stack structure, and comprise a channel material vertically extending through the stack structure. An additional stack structure vertically overlies the stack structure and comprises additional conductive structures and additional insulative structures. First pillar structures extend through the additional stack structure and vertically overlie a portion of the memory cells. Second pillar structures are adjacent to the first pillar structures and extend through the additional stack structure and vertically overlie another portion of the memory cells. Slot structures are laterally adjacent to the first pillar structures and to the second pillar structures and extend through at least a portion of the additional stack structure. A distance between the first pillar structures and the slot structures is substantially equal to a distance between the second pillar structures and the slot structures.

Microelectronic devices including slot structures, and related electronic systems and methods of forming the microelectronic devices

Growing community of inventors

Boise, ID, United States of America

Deep Panjwani