University of Electronic Science and Technology of China

Deen Gu

Yadong Jiang

Tao Wang

Wei Li

Yatao Li

Yicheng Chen

Dongyang Li

Xin Zhou

Yonghai Ma

Hao Zhong

Mengru Chen

Licheng Lin

Kai Yuan

A transparent top electrode composite film for organic optoelectronic devices includes a substrate, an MoOfilm layer coated on the substrate, a doped Ag-based film layer coated on the MoOfilm layer and an HfOfilm layer coated on the doped Ag-based film layer. A preparation method of the transparent top electrode composite film, which is achieved under vacuum and low temperature, includes steps of (A) depositing an MoOfilm layer on a substrate through thermal evaporation process or electron beam evaporation process without heating the substrate; (B) depositing a doped Ag-based film layer on the MoOfilm layer through sputtering process or evaporation process; and (C) depositing an HfOfilm layer on the doped Ag-based film layer through reactive sputtering process, thereby obtaining the transparent top electrode composite film. The composite film is able to be used as a top electrode material for organic optoelectronic devices.

Transparent top electrode composite film for organic optoelectronic devices and its preparation method

A preparation method of a vanadium oxide powder with high phase-transition latent heat includes steps of taking vanadium pentoxide, oxalic acid and PVP as raw materials, preparing a B-phase VOnano-powder modified by the PVP, and then annealing the B-phase VOnano-powder modified by the PVP at high temperature in an oxygen atmosphere, and obtaining the vanadium oxide powder with high phase-transition latent heat which includes M-phase VOwith a mass percentage in a range of 96-99% and VOwith a mass percentage in a range of 1-4%, and has the phase-transition latent heat larger than 50 J/g. Compared with the vanadium oxide powder prepared by a traditional method without PVP modification and using a vacuum annealing process, the phase-transition latent heat of the vanadium oxide powder provided by the present invention is increased by at least 60%.

Vanadium oxide powder with high phase-transition latent heat and preparation method thereof

A method for improving peroxidase-like activity of nanozyme and a product thereof are disclosed, which relate to the field of artificial enzymes in biochemistry. The method adopts a hydrogen peroxide solution with high concentration to treat the VO(B) powder for obtaining a product with high peroxidase-like activity. Compared with the pure VO(B) powder, the peroxidase-like activity of the product obtained by the method is increased by 4 to 12 times. The method provided by the present invention adopts raw materials with low cost and mild reaction conditions, is simple in operation and low in cost, which is conducive to batch preparation. The powder product obtained by the method is able to be applied to detect hydrogen peroxide, glucose, etc., and has great application prospects in biosensing, industrial wastewater treatment and sewage treatment.

Method for improving peroxidase-like activity of nanozyme and product thereof

An optical-readout synaptic device based on SiONand a preparation method thereof are provided. The device includes a surface plasmonic waveguide and a memristor; the surface plasmonic waveguide has a vertical three-layer structure that a second metal layer, a SiNdielectric layer and a first metal layer are successively arranged from top to bottom; the memristor has a vertical four-layer structure that a second electrode layer, a second resistive layer, a first resistive layer and a first electrode layer are successively arranged from top to bottom; the memristor is embedded in the surface plasmonic waveguide; and, the first resistive layer and the second resistive layer of the memristor serve as an optical signal transmission channel that is horizontally connected with the SiNdielectric layer of the surface plasmonic waveguide. The present invention realizes an optical-readout of synaptic weight and has incomparable advantages over a conventional electrical-readout synaptic device.

Optical-readout synaptic device based on SiONand preparation method thereof

A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

Vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance and a preparing method thereof

A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.

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Sichuan, China

Deen Gu