Xerox Corporation

Philips Lumileds Lighting Company LLC

Koninklijke Philips Corporation N.V.

Lumileds LLC

Neophotonics Corporation

Palo Alto Research Center Inc.

Lumileds Lighting U.s., LLC

Lumileds Holding B.v.

Decai Sun

Philip D Floyd

Eric Peeters

Christopher L Chua

Joel A Kubby

Ross D Bringans

David Kirtland Fork

Thomas L Paoli

Patrick Yasuo Maeda

Francesco Lemmi

Linda T Romano

Michel A Rosa

Alex T Tran

Raj B Apte

Jeng Ping Lu

Donald Leonard Smith

Koenraad F Van Schuylenbergh

Oleg Borisovich Shchekin

Phil Floyd

Robert L Thornton

Michael A Kneissl

Serge J Bierhuizen

Jingkuang Chen

Yajun Wei

Gregory W Eng

G A Connell

G A Neville Connell

Daniel Hofstetter

Nanze Patrick Wang

Wenjun Fan

Xiaolin Sun

David P Bour

Robert Anthony Street

Noble Marshall Johnson

Ping Mei

Paul Scott Martin

Daniel Alexander Steigerwald

Stefano Schiaffino

Scott Eugene Solberg

Tuan Anh Vo

Jackson H Ho

Ronald T Fulks

Ashim Shatil Haque

Peter Kner

Feixia Pan

Clarence John Dunnrowicz

Chris G Van De Walle

Chingwen Yeh

Koenraad Van Schuylenbergh

Charlene Sun

Donald L Smith

Koenraad F Schuylenbergh

A process for preparing a semiconductor structure for mounting to a carrier is disclosed. The process involves causing a support material to substantially fill a void defined by surfaces formed in the semiconductor structure and causing the support material to solidify sufficiently to support the semiconductor structure when mounted to the carrier.

Process for preparing a semiconductor structure for mounting

An array of housings with housing bodies and lenses is molded, or an array of housing bodies is molded and bonded with lenses to form an array of housings with housing bodies and lenses. Light-emitting diodes (LEDs) are attached to the housings in the array. An array of metal pads may be bonded to the back of the array or insert molded with the housing array to form bond pads on the back of the housings. The array is singulated to form individual LED modules.

LED module with high index lens

A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs)

A process for preparing a semiconductor light-emitting device for mounting is disclosed. The light-emitting device has a mounting face for mounting to a sub-mount. The process involves treating at least one surface of the light-emitting device other than the mounting face to lower a surface energy of the at least one surface, such that when mounting the light-emitting device, an underfill material applied between the mounting face and the sub-mount is inhibited from contaminating the at least one surface.

Process for preparing a semiconductor light-emitting device for mounting

A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

A vertical cavity laser apparatus is provided. In one embodiment, the apparatus includes an electrically responsive substrate; a support block positioned on the electrically responsive substrate; a bridge arm structure coupled to the support block, the structure having a base; a laser active area on the bridge arm structure, a tuning pad on the bridge arm structure, a laser bond pad on the bridge arm structure with traces connecting the laser bond pad to the laser active area and base. The traces are positioned and shaped to be symmetric to avoid problems due to the asymmetry of the injection current. Additionally, in this embodiment, the laser bond pad is kept at a height of the base in order to minimize device capacitance and the traces are also kept at the height of the base. Methods are also provided whereby impedance matching and high speed performance can be accomplished irregardless of the mechanical configuration of the bridge arm structure.

Method for improving high frequency operation of a vertical cavity surface emitting laser (VCSEL) with monolithically integrated bridge arm

A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

Interconnects for semiconductor light emitting devices

An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

Method of making photolithographically-patterned out-of-plane coil structures

A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A conductive transparent layer, e.g., of indium tin oxide, and a reflective metal layer overlie the layer of second conductivity type and provide electrical contact with the layer of second conductivity type. A plurality of vias may be formed in the reflective metal and conductive transparent layer as well as the layer of second conductivity type, down to the doped substrate layer. A plurality of contacts are formed in the vias and are in electrical contact with the doped substrate layer. An insulating layer formed over the reflective metal layer insulates the plurality of contacts from the conductive transparent layer and reflective metal layer.

Contact and omnidirectional reflective mirror for flip chipped light emitting devices

Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Structure and method for electrical isolation of optoelectronic integrated circuits

An array of light emitters includes a plurality of light emitting structures formed over a layered structure with at least one quantum well layer. At least one cladding layer is formed on over the at least one quantum well layer. At least one waveguide layer is formed on or over the at least one cladding layer. At least one isolation region is formed at least in between at least two of the plurality of light emitting structures. The at least one isolation region isolates the at least two light emitting structures from each other.

Densely-packed light emitters with layered semiconductor structure and methods of making the light emitters

A tunable microelectromechanical (MEMS) spectrophotometer with a rotating cylindrical reflective diffraction grating is integrated with a photodetector and an optical fiber light source on a Rowland circle on a monolithic silicon substrate.

Structure and method for a microelectromechanic cylindrical reflective diffraction grating spectrophotometer

A solid state laser beam scanning system having a single crystal silicon deflection and scanning mirror integrated with a laser diode. By combining the techniques of deep reactive ion etching of silicon with solder bump bonding techniques, completed and tested laser diodes are integrated with silicon substrates supporting micro-electro-mechanical systems layers.

Method and apparatus for an integrated laser beam scanner

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Los Altos, CA, United States of America

Decai Sun