Kepler Computing Inc.

Debraj Guhabiswas

Amrita Mathuriya

Noriyuki Sato

Sasikanth Manipatruni

Niloy Mukherjee

Tanay Gosavi

Ramamoorthy Ramesh

Jason Y Wu

James David Clarkson

Gabriel Antonio Paulius Velarde

Maria Isabel Perez

Saskikanth Manipatruni

An integration process including an etch stop layer for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Integrating embedded memory with logic interconnects

Non lead-based perovskite ferroelectric devices for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

High density ferroelectric random access memory (FeRAM) devices and methods of fabrication

Devices with continuous electrode plate and methods of fabrication

Memory devices with dual encapsulation layers and methods of fabrication

Growing community of inventors

Berkeley, CA, United States of America

Debraj Guhabiswas