Lucent Technologies Inc.

At&t Bell Laboratories

At+t Corp.

Other

Yale University

American Telephone & Telegraph Co., At&t Bell Laboratories

At&t Ipm Corp.

Deborah Lee Sivco

Alfred Yi Cho

Federico Capasso

Claire F Gmachl

Albert Lee Hutchinson

Jerome Faist

Alessandro Tredicucci

Carlo Sirtori

Arthur Mike Sergent

James Nelson Baillargeon

Sung-Nee George Chu

Mariano Troccoli

Gaetano Scamarcio

Raffaele Colombelli

Daryoosh Vakhshoori

Evgueni E Narimanov

Alfred Douglas Stone

Rafaelle Colombelli

Roberto Paiella

Milton L Peabody

George J Zydzik

Oskar Jon Painter

Masakazu Shoji

Hock Min Ng

Donald M Tennant

Michael C Wanke

Henry M O'Bryan, Jr

Serge Luryi

Niloy K Dutta

Harold Yoonsung Hwang

John Lopata

Alexey Belyanin

Jens Uwe Noeckel

Susanta Sen

Ruedeger Koehler

Paul R Berger

George Sung-Nee Chu

Nina Owschimikow

Mattias Beck

Axel Straub

Trinesha Shenika Mosely

Kartik Srinivasan

Alexander Soibel

Claire F Gmachi

Oana Malis

An optoelectronic transducer comprises a unipolar, intraband active region and a micro-cavity resonator. The resonator includes a 2D array of essentially equally spaced regions that exhibits resonant modes. Each of the spaced regions has a depth that extends through the active region and has an average refractive index that is different from that of the active region. The refractive index contrast, the spacing of the spaced regions, and the dimensions of the spaced regions are mutually adapted so that the array acts as a micro-cavity resonator and so that at least one frequency of the resonant modes of the array falls within the spectrum of an optoelectronic parameter of the active region (i.e., the gain spectrum where the transducer is a laser; the absorption spectrum where the transducer is a photodetector). In a first embodiment, the transducer is an ISB laser, whereas in a second embodiment it is a unipolar, intraband photodetector. In other embodiments, the laser is a surface-emitting ISB laser and the photodetector is a vertically-illuminated detector. In another embodiment, a nonlinear optical material is optically coupled to the micro-cavity resonator, which in one case allows an ISB laser to exhibit bistable operation.

Unipolar, intraband optoelectronic transducers with micro-cavity resonators

A broadband CLE capable of operation simultaneously at multiple wavelengths comprises: a core region including a multiplicity or cascade of stages, each stage including a radiative transition region. A first group of stages emits radiation at a first wavelength and at a first aggregate intensity per group, and a second group of stages emits radiation at a second wavelength and at a second aggregate intensity per group lower than the first intensity. The invention is characterized in that the second group has more stages than said first group, and the per-stage intensity of the first group is greater than that of the second group. This design reduces the difference between said first and second aggregate intensities. In one embodiment, groups that are located at or near to the ends of the cascade have more stages than groups that are centrally located within the cascade regardless of their wavelength. Our invention significantly reduces variations in modal gain across the desired broadband spectrum and produces sufficiently flat gain without requiring elaborate redesign of the stages. These features enable cw operation of a broadband intersubband laser.

Broadband cascade light emitters

An optical device comprises a cavity resonator and an intracavity ridge waveguide. The ridge waveguide includes a monolithically integrated intersubband core region and a nonlinear mixing region (NMR). In response to external pumping energy the core region generates laser light at a first frequency and in a first transverse mode. In response to the laser light the NMR generates parametric light at a second frequency and in a second transverse mode. For phase matching the effective-refractive-index-versus-ridge-width characteristics of the modes of the laser and the parametric light intersect one another at a phase matching width and so that, at greater widths, the effective refractive index of the mode of the higher frequency light is less than that of the lower frequency light. For true phase matching the width of the ridge is made to be essentially equal to the phase matching width.

Phase matched parametric light generation in monolithically integrated intersubband optical devices

Techniques for amplifying light produced by a quantum cascade laser are described. An assembly according to the present invention includes an optical amplifier having an optical input and an optical output. The optical output has an area significantly greater than that of the optical output and the geometry of the amplifier is such that the amplifier widens from the optical input to the optical output. The optical amplifier is formed of a layered waveguide structure which achieves quantum confinement of electrons and photons within the active region. A distributed feedback laser is suitably coupled to the optical amplifier at the optical input of the amplifier. The widening of the amplifier makes available a large number of electrons, so that the amplifier is able to produce many photons resulting from stimulated transitions caused by introduction of light to the optical input of the amplifier, even if the great majority of the transitions occur nonradiatively.

Optical amplifier for quantum cascade laser

A monolithic apparatus has a laser optical cavity. The laser optical cavity has a multi-layer structure that includes a first active semiconductor multi-layer and a second semiconductor multi-layer. The second semiconductor multi-layer is located laterally adjacent to the first active semiconductor multi-layer. The first active semiconductor multi-layer includes a sequence of quantum well structures that produce light of a lasing frequency in response to being electrically pumped. The second semiconductor multi-layer includes a sequence of quantum well structures and is configured to both absorb light of the lasing frequency and produce one of parametric light and harmonic light in response to absorbing light of the lasing frequency.

Nonlinear semiconductor light sources

The measurement of intersubband electroluminescence (ISB-EL) in unipolar quantum cascade lasers is achieved by forming a longitudinal cleave through the active region and waveguide of the QC laser device, exposing a complete side face of the device, including the active region. The conventional laser facets at the entrance and exit of the active region are coated with a highly reflective material and the emission from the exposed side face is measured. In theory, the sideface emission would comprise only the ISB-EL spontaneous emission, but some additional laser emission (due to scattering in the imperfect waveguide structure) also exits along this sideface. Spatial filtering and/or polarization monitoring can be used to differentiate the laser emission from the ISB-EL spontaneous emission.

Technique for measuring intersubband electroluminescence in a quantum cascade laser

In an intersubband light emitter, at least two injection/relaxation (I/R) regions contiguous with the same RT region have different doping levels. Preferably, one I/R region has a doping level that is at least 100 times lower than that of the other I/R region. In one embodiment, one I/R region is undoped, whereas the other I/R region is doped.

Intersubband light emitters with injection/relaxation regions doped to different levels

An optical device includes a stack of at least two different intersubband (ISB) optical sub-devices in which the gain/loss profiles of the individual ISB sub-devices are mutually adapted, or engineered, so as to generate a predetermined overall function for the combination. We define this combination device as being heterogeneous since not all of the individual ISB sub-devices are identical to one another. Illustratively, the parameters of each individual ISB sub-device that might be subject to this engineering process include: the peak energy of the ISB optical transitions (emission or absorption) associated with each RT region, the position of each sub-device in the stack; the oscillator strengths of these ISB transitions; the energy bandwidth of each transition; and the total length of the RT and I/R regions of each ISB sub-device. In one embodiment, our approach may be used to engineer a gain profile that has peaks at a multiplicity of different wavelengths, thus realizing a multi-wavelength ISB optical source in which the applied electric field self-proportions itself so that each individual ISB sub-device experiences the appropriate field strength for its particular design. Alternatively, the gain profile may be engineered to be relatively flat over a predetermined wavelength range. In another embodiment, our approach may be used to generate a function that compensates for a characteristic of another device. For example, our heterogeneous ISB device may be engineered to have a gain profile that compensates for the loss profile of another device. Alternatively, the gain/loss profile may be engineered to produce a nonlinear refractive index profile in our device that compensates for that of another device (e.g., an optical fiber).

Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades

An optical gain medium has first and second active layers and an injector layer interposed between the first and second active layers. The active layers have upper minibands and lower minibands. The injector layer has a miniband that transports charge carriers from the lower miniband of the first active layer to an excited state in the upper miniband of the second active layer in response to application of a voltage across the optical gain medium.

Quantum cascade laser with relaxation-stabilized injection

A self-mode-locking (SML) mid-infrared (5 and 8 &mgr;m) quantum cascade laser is formed that comprises both a relatively thin dielectric insulating layer (i.e., less than one-half micron in thickness) overlaid with an optically highly lossy (i.e., absorbing) layer, with a relatively long (approximately 3.5 mm) optical waveguide. Evidence of mode-locking is obtained from the measured optical spectra and corresponding interferograms, as well as from the rf spectra of the photocurrent detected with a fast quantum-well infrared photodetector. An estimate for the pulse width of approximately 3 psec is inferred from these data.

Self-mode-locking quantum cascade laser

The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.

Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emitters

A surface plasmon laser structure is formed to include a DFB structure as the metal carrying layer, thus forming a single mode surface plasmon laser. The DFB structure comprises a multiple layer metallic surface guiding structure (for example, titanium stripes covered with a layer of gold. forming alternating Ti/Au&mdash;Au stripes). The active region, in one embodiment, may comprise a quantum cascade structure.

Distributed feedback surface plasmon laser

In a mesa geometry semiconductor laser, a patterned dielectric coating used to define the stripe geometry contact on the top the mesa and to provide significant waveguiding comprises a chalcogenide glass. Applications to intersubband (e.g., quantum cascade) lasers are specifically described.

Mesa geometry semiconductor light emitter having chalcogenide dielectric coating

An article comprising a QC-DFB laser is disclosed. In the QC-DFB laser, an overlying grating structure achieves relatively strong coupling of the guided mode to the grating, and is thus highly effective in inducing single-mode operation even under cw operating conditions. The grating structure includes grooves etched in a plasmon-enhanced confinement layer (PECL) disposed adjacent and in contact with an upper metallic electrode. The grating structure and the PECL are designed such that in the grooves, the laser mode travelling in the waveguide can couple efficiently to the surface-plasmon at the electrode interface. This results in strong modulation of the laser mode, leading to strong modulation of, inter alia, the effective refractive index.

Apparatus comprising a quantum cascade laser having improved distributed feedback for single-mode operation

A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.

Semiconductor laser for operation in librational modes

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Warren, NJ, United States of America

Deborah Lee Sivco