International Business Machines Corporation

Deborah A Ryan

Effendi Leobandung

Klaus D Beyer

Peter I Smeys

Patricia A O'Neil

In an integrated circuit process for SOI including trench device isolation, the problem of voids in the trench fill is addressed by a triple fill process, in which a thermal oxide sidewall having recesses at the bottom corners is covered with a LPCVD deposition that fills in the recesses, followed by a void-free HDP deposition. Densification results in substantially the same etch rate for the three types of oxide.

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Lagrangeville, NY, United States of America

Deborah A Ryan