International Business Machines Corporation

Samsung Electronics Co., Ltd.

Globalfoundries Inc.

Other

Tokyo Electron Limited

University of Texas System

International Business Machines Operation

Deborah A Neumayer

Alfred Grill

Thomas M Shaw

Stephen McConnell Gates

Son Van Nguyen

Qinghuang Lin

Katherine Lynn Saenger

Robert B Laibowitz

Peter Richard Duncombe

Robert Dennis Miller

Wilbur David Pricer

Christos Dimitrios Dimitrakopoulos

Charles Thomas Black

Sampath Purushothaman

James William Adkisson

Randy William Mann

Daniel C Edelstein

Kevin K Chan

Roy Rongqing Yu

Nathan P Marchack

Alessandro Cesare Callegari

Vijay Narayanan

Cyril Cabral, Jr

Dirk Pfeiffer

Damon B Farmer

Dae-Gyu Park

Vishnubhai Vitthalbhai Patel

Michael Wayne Lane

James L Hedrick

Steven J Holmes

Anthony J Annunziata

Griselda Bonilla

John Albrecht Ott

Willi Volksen

Paul Charles Jamison

Bruce Kenneth Furman

James Bowler Hannon

Nicholas C M Fuller

Prabhakar Nandavar Kudva

Michael Abramovich Gribelyuk

Satoshi Oida

Mary Elizabeth Rothwell

Bruce Bennett Doris

Lawrence Alfred Clevenger

Effendi Leobandung

Louis L Hsu

Tak H Ning

Hariklia Deligianni

Michael Patrick Chudzik

Kenneth Parker Rodbell

Jack Oon Chu

John Michael Cotte

Sufi Zafar

Eric Andrew Joseph

Min Yang

Fenton Read McFeely

Gen Pei Lauer

Sebastian Ulrich Engelmann

Joseph Francis Shepard, Jr

Masaharu Kobayashi

Xiaoyan Shao

Jeong-Heon Park

Robert Rosenberg

Laura Louise Kosbar

Young-Hee Kim

Wenjuan Zhu

Uzma B Rana

Dinkar Virendra Singh

Pushkar Ranade

Dianne L Lacey

Norma Edith Sosa

Marinus J P Hopstaken

Devendra K Sadana

Stephen W Bedell

Eugene John O'Sullivan

Martin Michael Frank

Hosadurga K Shobha

Hiroyuki Miyazoe

Xiao Hu Liu

Solomon Assefa

Dario Leonardo Goldfarb

Robert L Bruce

Phaedon Avouris

Teddie Peregrino Magbitang

Xinhui Wang

David Robert Medeiros

Mahmoud M Khojasteh

John Rozen

Hsinyu Tsai

Yu-Ming Lin

Ranee W Kwong

Stephan Alan Cohen

Eric Gerhard Liniger

John Jacob Yurkas

Kam-Leung Lee

Douglas Andrew Buchanan

Marinus Hopstaken

Chandrasekara Kothandaraman

Yohei Ogawa

Masanobu Hatanaka

A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.

Low temperature lift-off patterning for glassy carbon films

Techniques facilitating blockchain ledgers of material spectral signatures for supply chain integrity management are provided. In one example, a computer-implemented method comprises validating, by a device operatively coupled to a processor, spectral signature data associated with a material, resulting in validated spectral signature data; and generating, by the device, a set of information corresponding to a transaction of the material in a blockchain associated with the material, wherein the set of information is related to the validated spectral signature data. In some embodiments, the computer-implemented method further comprises authenticating, by the device, a first party device associated with a first party to the transaction and a second party device associated with a second party to the transaction and including identities of the first party and the second party as indicated by the respective party devices in the set of information.

Blockchain ledgers of material spectral signatures for supply chain integrity management

The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Enhanced adhesive materials and processes for 3D applications

The present invention related to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Integrated circuits including at least two electrically conductive interconnect lines and methods of manufacturing generally include a surface of the integrated circuit. At least two electrically conductive interconnect lines are separated by a space of less than 90 nm and are formed on the surface. Each of the at least two interconnect lines includes a metal cap, a copper conductor having an average grain size greater than a line width of the interconnect. A liner layer is provided, wherein the liner layer and the metal cap encapsulate the copper conductor. A dielectric layer overlaying the at least two electrically conductive interconnect lines and extending along sidewalls thereof is provided, wherein the dielectric layer is configured to provide an airgap between the at least two interconnect lines at the spacing.

Interconnect structure including airgaps and substractively etched metal lines

Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measurable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measurable electrical parameter to computer elements.

On-chip biosensors with nanometer scale glass-like carbon electrodes and improved adhesive coupling

Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measureable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measureable electrical parameter to computer elements.

A conformal disposable absorber is disclosed which is capable of providing efficient heat transfer to an embedded memory device during a localized absorber anneal, without adversary impacting the back-end-of-the-line (BEOL) structure. The disposable absorber is composed of an amorphous carbonitride material that can be designed to have a low reflection coefficient for laser/flash illumination, and a high extinction coefficient for efficient laser/flash illumination absorption. The disposable absorber is formed at a temperature of 400&#xb0; C. or less.

Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication

Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation are provided. An example method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer; and irradiating a selected area of the dopant-containing amorphous silicon layer stack, wherein the selected area of the dopant-containing amorphous silicon layer stack interacts with an upper portion of the underlying crystalline semiconductor layer to form a doped, conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on the at least one portion of the surface of the crystalline semiconductor layer.

Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation

A scaled dielectric stack interlayer, compatible with subsequent high temperature processing with good electrical transport & reliability properties is provided. A method for forming a conformal aSi:H passivation layer on a semiconductor device is described. A patterned semiconductor wafer is placed in in a process chamber with a first layer formed thereon and a second layer formed thereon, the first layer and the second layer being two different materials Next, a SiHbased deposition up to a temperature of 400 degrees Celsius is used on the first layer and the second layer thereby forming a conformal aSi:H passivating layer is formed at a higher rate of deposition on the first layer selectively and a lower rate of deposit on the second layer.

Selective and conformal passivation layer for 3D high-mobility channel devices

A material stack is formed on the surface of a semiconductor substrate. The top layer of the material stack comprises at least an organic planarization layer. A neutral hard mask layer is formed on the top of the organic planarization layer. The neutral hard mask layer is neutral to the block copolymers used for direct self-assembly. A plurality of template etch stacks are then formed on top of the neutral hard mask layer. After formation of the template etch stacks, neutrality recovery is performed on the neutral hard mask layer and the top portions of the template etch stacks, the vertical sidewalls of the template etch stacks being substantially unaffected by the neutrality recovery. A template for DSA is thus obtained.

Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (DSA) patterning

Embodiments are directed to an electromagnetic memory device having a memory cell and an encapsulation layer formed over the memory cell. The memory cell may include a magnetic tunnel junction (MTJ), and the encapsulation layer may be formed from a layer of hydrogenated amorphous silicon. Amorphous silicon improves the coercivity of the MTJ but by itself is conductive. Adding hydrogen to amorphous silicon passivates dangling bonds of the amorphous silicon, thereby reducing the ability of the resulting hydrogenated amorphous silicon layer to provide a parasitic current path to the MTJ. The hydrogenated amorphous silicon layer may be formed using a plasma-enhanced chemical vapor deposition, which can be tuned to enable a hydrogen level of approximately 10 to approximately 20 percent. By keeping subsequent processing operations at or below about 400 Celsius, the resulting layer of hydrogenated amorphous silicon can maintain its hydrogen level of approximately 10 to 20 percent.

Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material

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Danbury, CT, United States of America

Deborah A Neumayer