Trw Limited

Northrop Grumman Systems Corporation

Other

Northrop Grumman Space & Missions Systems Corp.

Dean Tran

Edward A Rezek

Eric R Anderson

William L Jones

Ronald L Strijek

Luis M Rochin

Ronald A DePace

George J Vendura, Jr

Alan M Hirschberg

Christian L Marquez

Michelle M Hazard

Mark Kintis

John Joseph Berenz

Thomas J Roth

Jerry T Fang

David M Carberry

Salim Akbany

Alan Hirschberg

John C Brock

Steven J Mass

Harvey N Rogers, Jr

Yoshio Saito

Harvey Newell Rogers

Mark A Kruer

Thomas Taoming Chung

David H Boger

Maurice Lowery

James A Hathaway

Phu H Tran

Greg Keller

Ha K DeMarco

Leon M Singleton, Jr

Roosevelt Johnson

Jack S McLaren

Melissa Fuller

Chih Chang

Sonny D Le

Phillip Hayes

David M Hernandez

A method for assembling a bundle cable connector assembly that eliminates bird caging, wire threads extruding through a connector pin, loose wire threads, dielectric shield shrinking, etc. The method includes stripping the wire to create a birdcage preventative zone and an exposed tip with a crimping zone therebetween, and tinning the exposed wire at the birdcage preventative zone and the tip. The method then includes inserting the wire into a connector pin, and crimping the pin to the wire at the crimping zone using heat so that the tinning solder melts. The method then includes mounting the pin to a connector body and mounting a wire-locking device to the connector body to lock the pin to the connector body.

Bundle cable connector assembly, components, tooling and manufacturing method

Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

Eutectic bonding of ultrathin semiconductors

An integrated getter structure and a method for its formation and installation in a circuit module enclosure (). The integrated structure includes a hydrogen getter structure () and selected quantities of a material () that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material () is placed in discrete quantities over the hydrogen getter structure (). In another embodiment, the hydrogen getter structure () is formed over a sheet of the material () and is provided with apertures () to expose the material ().

Integrated multi-purpose getter for radio-frequency (RF) circuit modules

A device and a process for integrating light energy transmit and/or receive functions with active devices such as GaAs or InP devices or light emitting devices, such as lasers. The device and process includes forming a passivation layer on top of the active device and forming a silicon photodetector on top of the passivation layer. The photodetector may be formed utilizing a standard solar cell growth process and may be formed as a mesa on top of the active or light-emitting device, thus forming a relatively less complicated semiconductor with an integrated monitoring device.

Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices

The invention relates to an optical, integrated alignment device for accurately aligning and efficiently coupling energy between in-plane optical devices. A semiconductor substrate is etched to include a groove for an optical fiber and a lens for passing an optical signal from a cut fiber to a photodetector. The etched semiconductor substrate may be used to pass an optical signal from a surface light emitting device to a cut fiber. The end of the optical fiber is cut at a slant that redirects an optical signal from the fiber through the lens or vice-versa. The lens focuses the optical signal onto a target.

Integrated aspheric optical coupler for RF planarized automatic photonics packaging

A chip or die attachment process and related apparatus, in which a desired quantity of solder (or) is dispensed onto each, in turn, of a number of desired locations on a substrate (or), and then an integrated-circuit chip () is precisely positioned at each location immediately after the solder is dispensed at that location. Hot gas heaters are used both to heat the solder (or) as it is dispensed onto the substrate (or), and to heat the integrated-circuit chip () and to reflow the solder beneath the chip. In one form of the invention, the solder is dispensed from a wire spool () and melted in position on the substrate (). Alternatively, the solder is dispensed as a drop () from a liquid solder reservoir ().

Thermal solder writing eutectic bonding process and apparatus

A relatively simple and inexpensive process for plating precious alloyed metals, such as AuSn, AuSnIn, AgSn, AuIn and AgIn. Anodes are formed from each of the metal components in the alloy and disposed in a conducting solution. The mass of each metal components is determined by Faraday's law. The target is also disposed in the conducting solution. Plating current is independently applied to each anode. The plating is conducted under an ultraviolet light sources to optimize the process. The plating alloys can be used for various purposes including attaching a semiconductor die to a substrate. Since the process does not involve exposure of the semiconductor die to a relatively high temperature for a relatively long time, the process does not pose a risk of contamination of the semiconductor by the adhesive or wax used to hold the die in place on the carrier during processing. Moreover, unlike earlier known processes which utilize epoxy, the precious alloyed metals do not wet the entire die but only the metal contact areas, thus avoiding potential short circuit to the die.

Precious alloyed metal solder plating process

A process for fabricating a photonics package includes securing a ferrule to an optical fiber, inserting the ferrule through a movable flange into a photonics housing containing a photodiode, adjusting the ferrule longitudinally within the flange to position the end of the optical fiber with respect to the surface of the photodiode and welding the ferrule to the flange. Thereafter, the ferrule and flange assembly is adjusted laterally with respect to the photodiode and the lower end of the flange is secured to the housing using hot gas injection or laser soldering which allows lateral adjustment of the fiber during the solder cooling process for final positioning with respect to the photodiode.

Process for fabricating a photonics package and for aligning an optical fiber with a photodetector surface during fabrication of such a package

A resonant photodetector assembly ( ) which uses multiple reflections of light within a photodetector ( ) to convert input light into an electrical signal. The photodetector ( ) includes a combination of generally planar semiconductor layers including a photodetector active layer ( ) where light is converted into an electrical output. The photodetector ( ) further includes a first outer electrical contact layer ( ) and a second outer electrical contact layer ( ). A waveguide ( ) is positioned on the photodetector ( ) and has a waveguide active layer ( ) positioned between a pair of waveguide cladding layers ( ), a first end ( ) for receiving input light and a second end ( ) for reflecting the light. A reflector ( ) is positioned on the second end ( ) of the waveguide ( ) at an angle relative to a line parallel to the substrate ( ), where the reflector ( ) reflects the light received by the first end ( ) of the waveguide active layer ( ) towards the photodetector ( ). A reflector ( ) is positioned on the second outer layer ( ) of the photodetector ( ) and provides a reflective surface for reflecting the light within the photodetector ( ).

Resonant photodetector

A cold welding technique for securing a fiber optic cable ( ) to a ferrule ( ). The fiber optic cable ( ) is inserted into a sleeve ( ). The fiber cable and sleeve assembly is then slid into a sleeve bore ( ) through one end of the ferrule ( ) so that the fiber ( ) extends out of an opposite end ( ) of the ferrule ( ). The sleeve ( ) is then retracted from the ferrule ( ). A cold electroplating process is performed so that a layer ( ) of a suitable plating material is deposited over the end ( ) of the ferrule ( ) through which the fiber ( ) extends so that the fiber cable ( ) is held within the ferrule ( ) and the ferrule opening is hermetically sealed. The sleeve ( ) is then slid back into the ferrule ( ) and is soldered to the ferrule to hold it in the desired location.

Cold welding process for fiber optic/ferrule attachment

A solar cell comprises a superstrate formed from a material that is transparent to light, a first layer formed of delta doped silicon, a plurality of layers formed from semiconductor materials, each characterized by multi-quantum wells and multiple band gaps, a first semiconductor layer having a band gap energy state that is the smallest, the last semiconductor layer having-a band gap that is the largest, and the intermediate semiconductor layers having band gaps transitioning from the smallest to the largest, a second layer overlying the semiconductor layers and formed of delta doped silicon, an n-cap layer formed on the second delta doped layer, and a metal layer formed on the n-cap layer and serving to reflect light into the semiconductor.

Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor

Disclosed are hydrogen gettering structure ( ) and use of such structure and methods of forming such structure. The hydrogen gettering structure ( ) includes a titanium member ( ) and a silver-doped palladium layer ( ) on the titanium member ( ), the silver assisting palladium to increase the hydrogen gettering. The silver-doped palladium can be deposited on the titanium member by sputtering. The hydrogen gettering structure ( ) can be attached to a semiconductor module component ( ) and incorporated in a semiconductor module ( ) to increase hydrogen gettering, or can be included in other structure (e.g., nuclear reactor structure) where absorption or gettering of hydrogen is necessary or desired.

Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication

A method of solar cell external interconnection and a solar cell panel ( ) made thereby are disclosed. An assembly ( ) including a solar cell module ( ), a flexible lead frame ( ) to which the solar cell module is to be interconnected and a solder located between the solar cell module and the flexible lead frame, is provided. The solder is heated by directing a hot gas ( ) into the area of the solder to melt the solder and form a soldered connection ( ) between the solar cell module and the lead frame. The soldered assembly is attached to a module carrier panel ( ) by embedding a portion of the assembly in a first, flexible adhesive ( ) and another portion of the assembly in a second, thermally curable adhesive ( ) which is then cured to anchor the assembly on the module carrier panel.

Method of solar cell external interconnection and solar cell panel made thereby

An angle cavity resonant photodetector assembly ( ), which uses multiple reflections of light within a photodetector ( ) to convert input light into an electrical signal. The photodetector ( ) has a combination of generally planar semiconductor layers including semiconductor active layers ( ) where light is converted into an electrical output. The photodetector ( ) is positioned relative to a waveguide ( ), where the waveguide ( ) has a waveguide active layer ( ) located between a pair of waveguide cladding layers ( ) and ( ) and includes a first end ( ) for receiving light and a second end ( ) for transmitting the light to the photodetector ( ). The photodetector ( ) has a first reflector ( ) and second reflector ( ) that provides for multiple reflections across the semiconductor active layers ( ). In another embodiment, the waveguide ( ) is positioned on one side of a cavity ( ) and the photodetector ( ) is positioned at an opposite end of the cavity ( ) such that the light from the waveguide ( ) travels across the cavity ( ). The photodetector ( ) is angled relative to the propagation direction of the light. The photodetector includes the first reflector ( ) and the second reflector ( ), which causes the light to pass through different areas of the photodetector active layers ( ).

Angle cavity resonant photodetector

A method of making a micro-miniature switch device ( ), which has at least one member ( ) movable relative to a substrate ( ) upon which the device is provided, includes providing a layer of sacrificial non-photolithography material upon a stratum connected to the substrate. A template is provided via photolithographing step that uses a photoresist material upon a stratum connected to the substrate. A layer is provided to include at least a portion of the movable member. The photoresist material and the sacrificial non-photolithography material are removed using photoresist developer. Preferably, at least two photolithography process steps utilize a single photolithographic mask. Also preferably, substrate material is removed to create a recess and at least one channel into the substrate, wherein the channel intersects the recess. At least a portion of the movable member is provided at a location within the recess and at least a portion of the movable member is provided at a location within the channel.

Growing community of inventors

Westminster, CA, United States of America

Dean Tran