Intel Corporation

Arizona State University

Storwatts, Inc.

Dean Samara-Rubio

Ansheng Liu

Sean M Koehl

Mario J Paniccia

Michael T Morse

Ling Liao

Shlomo Ovadia

Andrew Alduino

Siegfried B Fleischer

Christina A Frost

Dexter W Hodge

Ding Yi

John Tolle

John Kouvetakis

Harold D Ackler

Robert J Moffat

Jose Menendez

Chi D Chu

Chunli Cai

Elizabeth Samara-Rubio

Certain examples present an improved compressed-air energy storage system. The system can include multiple sequential stages, in which accumulators are charged with air, which influences a hydraulic fluid to influence a pump/motor, and vice versa.

Compressed air energy storage

Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a SnGebuffer layer and their uses are provided.

Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon

Apparatus and methods for switching N optical input signals to M optical outputs are disclosed. In an example, an apparatus includes a plurality of optically transparent fabrics. Each of the fabrics receive at least one optical input signal and switch that received signal to at least one of a plurality of intermediate outputs. A multiplexer is operatively coupled between the intermediate outputs of the plurality of optically transparent fabrics and the M optical outputs.

Methods and apparatus for switching N optical input signals to M optical outputs

A temperature sensing and control method and apparatus. In one aspect of the present invention, an apparatus according to the teachings of the present invention includes an optical path disposed in semiconductor material. A four-terminal resistor is defined in the semiconductor material. At least a portion of the optical path is directed through the four-terminal resistor. The four-terminal resistor includes a first pair of terminals between which a probe current is to be injected. The four-terminal resistor also includes a second pair of terminals between which a voltage drop is to be measured so as to determine a resistance along the portion of the optical path directed through the four-terminal resistor. Temperature may be derived from the determined resistance of the four-terminal resistor. In one embodiment, the temperature of the semiconductor material may then be controlled with a heater in response to the derived temperature.

Method and apparatus for sensing a temperature along an optical path in semiconductor material

A doped barrier region included in an optical phase shifter is disclosed. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide and a second region of the optical waveguide. The second region of the optical waveguide includes a higher doped region of material and a lower doped region of material. An insulating region disposed between the first and second regions of the optical waveguide is also included. A first portion the higher doped region is disposed proximate to the insulating region. A dopant barrier region is also included and is disposed between the higher and lower doped regions of the second region of the optical waveguide.

Phase shifting optical device with dopant barrier

A waveguide Bragg grating (WBG) is apodized by varying the duty cycle of selected grating periods while fixing the pitch of the grating periods. In one embodiment, the WBG is implemented in a silicon substrate using polysilicon filled trenches of varying width while keeping the grating periods' pitch constant. The polysilicon trenches are formed so that if the width of one trench is increased compared to an adjacent grating period, the trench width in the other adjacent grating period (if present) is decreased.

Waveguide-based Bragg gratings with spectral sidelobe suppression and method thereof

According to the invention, systems, apparatus and methods are disclosed for optically enabling a circuit component in a large scale integrated circuit. In one embodiment, the invention is a circuit comprising a light sensing device for producing a signal in response to sensing light, an optic function subcircuit, and a switch connected to the light sensing device and to the optic function subcircuit for activating the optic function subcircuit when light is sensed. The light sensing device is preferably a phototransistor and a light sensing circuit is preferably placed between the light sensing device and the switch for amplifying and conditioning the light sensing signal. The optic function subcircuit can be an optical modulator, an optical receiver or any other device that is to be operated and powered only when incident light is present. The switch can be a logic gate or a transistor switch coupled to the light sensing device and to an input to the optic function subcircuit, such as a power supply or a clock input, for alternately enabling and disabling the input to the optic function subcircuit.

Method and apparatus for optically enabling a circuit component in a large scale integrated circuit

An antifuse circuit includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serving as another electrode of the capacitor. The antifuse is programmed by externally provided radiation that can rupture the gate oxide so that the gate and well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.

Externally programmable antifuse

A temperature sensing and control method and apparatus. In one aspect of the present invention, an apparatus according to the teachings of the present invention includes an optical path disposed in semiconductor material, a grating disposed in the optical path, and a thermal probe including an optical sensor optically coupled to the grating to sense a spectral response of the grating. The thermal probe is adapted to determine a temperature of the optical path in which the grating is disposed in response to the spectral response of the grating.

Method and apparatus for sensing a temperature along an optical path with a grating in semiconductor material

Method and apparatus for adjusting the phase of an optical beam. In one aspect of the present invention, an optical device includes a substrate through which an optical beam is to be directed along an optical path. In one embodiment, the optical device includes an array of segments of optical phase-shifting structures along the path. In one embodiment, each respective one of the segments is to be selectively switched on or off to adjust a phase of the optical beam. In one embodiment, the optical phase-shifting structures include capacitive structures to induce the plasma optical effect to adjust the phase of an optical beam. In another embodiment, the optical phase-shifting structures include an electro-optic material such as Lithium Niobate.

Method and apparatus for adjusting the phase of an optical beam

A semiconductor-based gain optical phase-shifting device, method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a semiconductor substrate through which an optical beam is to be directed along an optical path through the semiconductor substrate. A plurality of floating charge modulated regions are disposed along the optical path. A phase of the optical beam is responsive to a charge concentration in each of the plurality of floating charge modulated regions. A plurality of tunneling insulation layers are disposed between each of the plurality of floating charge modulated regions and the semiconductor substrate. A plurality of control nodes are disposed proximate to the plurality of floating charge modulated regions. Each of the control nodes control the charge concentration in a respective one of the plurality of floating charge modulated regions. A plurality of blocking insulation layers disposed between each of the plurality of control nodes and the plurality of floating charge modulated regions.

Method and apparatus for phase-shifting an optical beam in a semiconductor substrate

An optical switching method and apparatus. In one aspect of the present invention, the disclosed apparatus includes first and second multi-mode interference (MMI) splitting devices in a semiconductor substrate. First and second outputs of the first MMI splitting device are optically coupled to first and second inputs, respectively, of the second MMI splitting device. First and second phase control devices are included in the semiconductor substrate. The first input of the second MMI splitting device is optically coupled to the first output of the first MMI splitting device through the first phase control device. The second input of the second MMI splitting device is optically coupled to the second output of the first MMI splitting device through the second phase control device. The first input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices. The second input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices.

Growing community of inventors

San Jose, CA, United States of America

Dean Samara-Rubio