Ams-Osram International Gmbh

Dean Maximilian Schoke

Hubert Halbritter

Martin Rudolf Behringer

Alvaro Gomez-Iglesias

Bruno Jentzsch

Peter Fuchs

Christian Lauer

Tomasz Swietlik

According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance Rof the first resonator mirror is wavelength-dependent, so that Ror a product R of Rand the reflectance Rof the second resonator mirror in a wavelength range decreases from a target wavelength λof the laser to λ+Δλ from a value R, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.

Semiconductor laser and LIDAR system and also laser system with the semiconductor laser

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Wuppertal, Germany

Dean Maximilian Schoke