Elantec, Inc.

Elantec Semiconductor, Inc.

Dean Jennings

A method of forming a semiconductor substrate, comprising the steps of: providing a device substrate of a first conductivity type having a first surface and a second surface, and a handle substrate; depositing a dopant in the first surface of the wafer; diffusing the dopant through the wafer from the first surface toward the second surface, thereby forming a well; bonding the first surface of the device wafer to the handle substrate; and thinning the device substrate to yield a final device layer with a retrograde well. The dopant may be of the first or a second conductivity type.

Method of forming retrograde well in bonded waffers

A method for dissipating accumulated charge in a trench isolation structure, comprising the steps of: etching the trench region into a silicon substrate; forming an insulating region on the sidewalls of the trench and the base of the trench; removing the insulator at the bottom of the trench; and filling the trench with polysilicon, the polysilicon engaging the second layer of silicon below the insulator layer.

Polysilicon filled trench isolation structure for soi integrated circuits

A method for dissipating accumulated charge in a trench isolation structure, comprising the steps of: forming a contact region of an area having a cross section greater than the width of the isolation structure; and coupling the isolation structure to a charge dissipation means.

Method for making a contact structure for a polysilicon filled trench

A silicon on insulator (SOI) process is disclosed which includes the steps of forming an etch stop layer in a starting wafer, forming an insulating layer on the etch stop layer, bonding this wafer to a handle wafer, thinning the start wafer down to the etch stop and then recovering a device layer from the etch stop layer by outgassing dopants from the etch stop layer.

Silicon on insulator process with recovery of a device layer from an

A polishing tool having a polishing wheel that forms a set of pockets wherein the pockets receive a stream of water and are formed such that a high hydrostatic pressure builds in the pockets as the polishing tool rotates in a high precision grinding machine and addresses a surface of a substrate. The high hydrostatic pressure removes material from the surface of the substrate while preserving the precise thickness variation control of the high precision grinding machine.

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San Ramon, CA, United States of America

Dean Jennings