Agilent Technologies, Inc.

Hewlett-packard Company

Keysight Technologies, Inc.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Avago Technologies Wireless Ip, Pte. Ltd.

Dean B Nicholson

Eric R Ehlers

Reto Zingg

Keith W Howell

Ron Jay Barnett

Matthew K Schwiebert

Fred Herbert Ives

Stephen J Westerman

Geary L Chew

Brian Wade Carlson

Gerald J Gleason

Robert J Matreci

Jonathan Storie

An oscillator generates a radio frequency (RF) output signal having high phase shift versus frequency characteristics close to a desired output frequency of the oscillator. The oscillator includes a resonator having a resonant frequency that is substantially the same as the desired output frequency of the oscillator, where the resonator provides a reflected signal; a resistor connected to one port of the resonator, another port of the resonator being connected to ground; an amplifier configured to receive the reflected signal from the resonator and to output an amplified reflected signal as the RF output signal; and a circulator having a first port connected to the resonator via the resistor, a second port connected to an input of the amplifier, and a third port connected to an output of the amplifier such that the amplified reflected signal is input back to the resonator.

Oscillator with one-port resonator

An oscillator includes a resonator and a first loop circuit. The first loop circuit includes an amplifier and a first coupler. That first loop circuit is electrically coupled to the resonator. The oscillator is configured to produce negative feedback for the amplifier in a cavity mode relative to short circuit terminations or open circuit terminations of a cavity modelling the oscillator at frequencies offset from a carrier frequency. The oscillator has a loss of less than 4.00 dB for a bidirectional trip through the cavity at the frequencies offset from the carrier frequency.

Low phase noise oscillator using negative feedback

A power diverter has a first terminal for interposition between a signal input and a signal output. A MEMS switch is coupled to the first terminal and has a MEMS switch control input. A MEMS protection switch is coupled to the MEMS switch and has a protection switch control input. The switch control inputs are configured to receive control signals for selectively placing the power diverter in i) an ON state in which signal power at the signal input is diverted from the signal output via the MEMS switch and the MEMS protection switch, ii) an OFF state in which signal power at the signal input is not diverted from the signal output, and in which the MEMS switch mitigates an insertion loss and distortion imparted by the MEMS protection switch to a signal path between the signal input and the signal output, and iii) an intermediary state in which the MEMS protection switch reduces current flow through the MEMS switch.

Power diverter having a MEMS switch and a MEMS protection switch

By adding light reflective and/or transparent and/or translucent material within a micro-electronic circuit housing, improved light transfer is achieved between a light generation source and a light utilization device. In one embodiment, the reflective material is placed on the inside surface of a non-metallic housing lid and the light from the light source (typically an LED) reflects from the reflective material and impacts the device (typically an FET). In another embodiment, the LED and FET are encased in a clear (low light-loss) material (typically silicone overcoat) so as to allow the light from the LED to reflect from the top of the clear material onto the FET. If desired, an opaque encapsulant surrounds the clear material and fills out the volume within the housing. In another embodiment, clear or translucent (as opposed to opaque) encapsulant can be used to serve dual purpose as both the structural (volume filling, defined package share/outline) agent as well as to permit the internal light transmission and reflections to illuminate the device.

Electronic microcircuit having internal light enhancement

An integrated circuit includes a first RF port and a second RF port. A limiter section is disposed between the first RF port and the second RF port and a detector section coupled to an RF signal path between the first RF port and the second RF port configured to detect a power level of an input signal, and coupled to the limiter section.

Active limiter with integrated sensor

In one aspect, a signal path is described. The signal path has a nominal impedance over a specified bandwidth and interconnects a port of a microwave circuit package and a microwave component mounted in the microwave circuit package. The signal path includes an inductive transition and first and second capacitive structures. The inductive transition extends from a first point on the signal path to a second point on the signal path and has an excess impedance above the nominal impedance. The first and second capacitive structures respectively shunt the first and second points on the signal path to compensate the excess impedance of the inductive transition. The inductive transition and the first and second capacitive structures approximate a filter having an impedance substantially matching the nominal impedance over the specified bandwidth. In other aspects, a microwave circuit package that incorporates the above-described signal path and an interconnection method that includes forming the above-described signal path are described.

Interconnecting a port of a microwave circuit package and a microwave component mounted in the microwave circuit package

A MEMS switching system includes a power diverter interposed between a signal source and a bank of MEMS switches. The power diverter has an activated state wherein signal power from the signal source is diverted from the bank of MEMS switches, and a deactivated state wherein signal power from the signal source is not diverted from the bank of MEMS switches. A control signal selects between the activated state and the deactivated state of the power diverter.

MEMs switching system

A surface mountable coaxial solder interconnect. The invention provides a small, low-cost, passively self-aligning, high-frequency electronic interconnect adapted to mass production and method. The invention includes a substrate, a signal conductor, and an annular conductor. The substrate incorporates an annular pad and a signal pad substantially centered within the annular pad. The signal conductor includes reflowed solder and is wetted to the signal pad. Similarly, the annular conductor includes reflowed solder and is wetted to the annular pad. The invention may also provide a second substrate substantially parallel to the first substrate that includes a second annular pad and a second signal pad substantially centered within the second annular pad. In such a case, the signal conductor is also wetted to the second signal pad, and, similarly, the annular conductor is also wetted to the second annular pad. The method of the invention includes obtaining a mask and a substrate. The mask obtained defines a center cavity and an annular cavity surrounding the center cavity, and may also define an outer cavity in fluidic communication with the annular cavity. The substrate obtained includes a solder-wettable signal pad, and a solder-wettable annular pad surrounding the signal pad. The mask is then filled with solder paste and aligned with the substrate such that the center cavity of the mask is in registry with the signal pad. The solder paste is then reflowed, generating solder wetting the solder-wettable signal pad and the solder-wettable annular pad.

Surface mountable coaxial solder interconnect and method

The present invention relates to GaAs FET switches for use in microwave test equipment. For many microwave applications, particularly GSM (Global System for Mobile Telecommunications) basestation testing, accurate, reliable switching of microwave signals is desirable. GaAs FET switches are widely used to switch microwave signals in many applications because of their small size and high reliability. However, GaAs FET switches have a significant drawback called the 'slow tail' effect. This effect causes the final amplitude of the microwave signal to only be reached gradually after a 10 to 20 millisecond interval. The present invention integrates high intensity LEDs above GaAs IC switches to decrease the absolute magnitude of the slow tail effect, and to shorten its length for faster, more accurate switching.

Faster switching GaAs FET switches by illumination with high intensity

A module technology allows a PGA like package architecture to be used in microwave instruments and other high frequency systems where high isolation, low reflection, and low cost multi-chip modules are needed.

Pin grid array solution for microwave multi-chip modules

By combining four hexagonal ferrite spheres under the same electromagnet structure, a magnetically tuneable bandpass filter can be built in waveguide yielding high off resonance isolation, while keeping insertion loss to a reasonable value. Implementations of this filter in A, Q, U, and V bands have typical off resonance isolation greater than 70 dB and insertion loss less than 13 dB for full-band tuning. The filter can be utilized as a preselector for swept-frequency signal analyzers, for example.

Growing community of inventors

Windsor, CA, United States of America

Dean B Nicholson