International Business Machines Corporation

Dean A Herman, Jr

Lubomyr Taras Romankiw

Sol Krongelb

Daniel A Nepela

John Casimir Slonczewski

Bernell E Argyle

Hin P Lee

Bojan Petek

Thomas J Beaulieu

Thomas C Arnoldussen

Alfred Grill

Katherine Lynn Saenger

Jack Oon Chu

Timothy Joseph Chainer

Edward John Yarmchuk

A method for forming an integrated circuit on an insulating substrate is described comprising the steps of forming a semiconductor layer on a seed wafer substrate containing an at least partially crystalline porous release layer, processing the semiconductor layer to form a 'transferable' device layer containing at least one semiconductor device, and bonding said transferable device layer to a final, insulating substrate before or after separating said device layer from the seed wafer substrate. A second method, for separating a semiconductor layer from a seed wafer substrate, is described wherein an at least partially crystalline porous layer initially connecting the semiconductor layer and seed wafer substrate is split or broken apart by the steps of (i) introducing a fluid including water into the pores of said porous layer, and (ii) expanding said fluid by solidifying or freezing to break apart the porous layer. The at least partially crystalline porous layer may incorporate at least one porous silicon germanium alloy layer alone or in combination with at least one porous Si layer. Also described is an integrated circuit comprising the transfered device layer described above.

Transferable device-containing layer for silicon-on-insulator applications

A method for forming an integrated circuit on an insulating substrate is described comprising the steps of forming a semiconductor layer on a seed wafer substrate containing an at least partially crystalline porous release layer, processing the semiconductor layer to form a &ldquo;transferable&rdquo; device layer containing at least one semiconductor device, and bonding said transferable device layer to a final, insulating substrate before or after separating said device layer from the seed wafer substrate. A second method, for separating a semiconductor layer from a seed wafer substrate, is described wherein an at least partially crystalline porous layer initially connecting the semiconductor layer and seed wafer substrate is split or broken apart by the steps of (i) introducing a fluid including water into the pores of said porous layer, and (ii) expanding said fluid by solidifying or freezing to break apart the porous layer. The at least partially crystalline porous layer may incorporate at least one porous silicon germanium alloy layer alone or in combination with at least one porous Si layer. Also described is an integrated circuit comprising the transfered device layer described above.

An integrated data storage disk and disk drive assembly includes a rotatably supported magnetic disk for storing data. A rotor is fixedly joined to the disk for rotating the disk, and includes a plurality of rotor poles. A stator includes a plurality of stator poles positioned around the rotor for sequentially cooperating with respective ones of the rotor poles for rotating the rotor to rotate the disk. The disk and drive may be fabricated using lithographic and electroplating techniques, and a plurality of coaxial disks may be driven by a single disk drive in exemplary embodiments.

Integrated data storage disk and disk drive

Magnetic thin film structures are disclosed including a laminate of a layer of nonmagnetic material sandwiched between first and second layers of magnetic material and at least one edge closure layer of magnetic material disposed on a side edge of the laminate with the edge closure layer being in magnetic contact with the first and second layers of magnetic material. The edge closure layer eliminates magnetic edge closure domains and magnetic edge-curling walls in the yoke and poletip regions, or in a fluxguide of a magnetic recording head to substantially eliminate Barkhausen noise and wall network instabilities. Multiple layer laminates are also disclosed having a plurality of nonmagnetic layers each of which are sandwiched between layers of magnetic material and wherein the laminate includes edge closure layers that contact all the magnetic layers. Several methods are disclosed for fabricating the laminate. In one class of technique, the side edges are deposited together with a top layer in a single plating operation. In an another embodiment, the side edge closure layers are separately plated. Another embodiment provides for a layer of antiferromagnetic material deposited between the nonmagnetic layer and one of the magnetic layers to provide additional anisotropy.

Magnetic thin film structures fabricated with edge closure layers

Magnetic thin film structures including a laminate of a layer of nonmagnetic material sandwiched between first and second layers of magnetic material and at least one edge closure layer of magnetic material disposed on a side edge of the laminate with the edge closure layer being in magnetic contact with the first and second layers of magnetic material. The edge closure layer eliminates magnetic edge closure domains and magnetic edge-curling walls in the yoke and poletip regions, or in a fluxguide of a magnetic recording head to substantially eliminate Barkhausen noise and wall network instabilities. Multiple layer laminates are also disclosed having a plurality of nonmagnetic layers each of which are sandwiched between layers of magnetic material and wherein the laminate includes edge closure layers that contact all the magnetic layers. Several methods are disclosed for fabricating the laminate. In one class of technique, the side edges are deposited together with a top layer in a single plating operation. In an another embodiment, the side edge closure layers are separately plated. Another embodiment provides for a layer of antiferromagnetic material deposited between the nonmagnetic layer and one of the magnetic layers to provide additional anisotropy.

Method of fabricating magnetic thin film structures with edge closure

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Garrison, NY, United States of America

Dean A Herman, Jr