Epistar Corporation

De Shan Kuo

Chien Fu Shen

Yu Yao Lin

Chun Kai Wang

Jui Hung Yeh

Wei Yu Yen

Ting Chia Ko

Tsun Kai Ko

Che-Hung Lin

A method of manufacturing a light-emitting element, includes: providing a base having an upper surface and a lower surface; forming a semiconductor stack on the upper surface; removing part of the semiconductor stack to form an isolation region surrounding the semiconductor stack; forming a dielectric stack covering the semiconductor stack and the isolation region; and applying a first laser having a first wavelength to irradiate the base along the isolation region; wherein the dielectric stack has a reflectance of 10%-50% and/or a transmittance of 50%-90% for the first wavelength.

Light-emitting element, display device and backlight unit

An optoelectronic device comprises: a substrate having a first surface and a normal direction perpendicular to the first surface; a first semiconductor formed on the first surface of the substrate, comprising a plurality of hollow components formed in the first semiconductor layer; a first protection layer formed on a sidewall and a bottom wall of the plurality of the hollow components, and the bottom wall comprises a portion of the first surface; and a buffer layer formed on the first semiconductor layer wherein the buffer layer comprises a first surface and a second surface opposite to the first surface.

Optoelectronic device and method for manufacturing the same

A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.

Light-emitting element and the manufacturing method thereof

Growing community of inventors

Hsinchu, Taiwan

De Shan Kuo