Ekc Technology Inc.

Honeywell International Inc.

De-Ling Zhou

Robert J Small

Wenya Fan

Shihying Lee

Michael E Thomas

Victor Y Lu

Anil Shriram Bhanap

Ananth Naman

Roger Yu-Kwan Leung

Brian J Daniels

Bakul P Patel

Lei Jin

Tiffany Nguyen

Jing Qiao

Becky Min Hon

Richard William Charm

Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 &#x3bc;m, and a boron concentration in a range of from about 1&#xd7;10to 1&#xd7;10atoms/cm.

Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks

Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

Repair and restoration of damaged dielectric materials and films

The present invention is directed to resist and etching residue removing compositions containing at least one nucleophilic amine compound possessing reduction and oxidation potentials, a two-carbon atom linkage alkanolamine compound, and optionally water and/or one or more corrosion inhibitors. The compositions may be substantially free of hydroxylamine, polar organic solvents, water, corrosion inhibitors, or a combination thereof. The compositions are useful in processes for removing resists and etching residue from metal or metal alloy substrates or substrate layers used in micro-circuitry fabrication.

Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal

A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.

Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

The present invention relates to, inter alia, a composition for stripping photoresist from substrates comprising: about 5% to about 50% by weight of an alkyl substituted pyrrolidone, an alkyl substituted piperidone, or a mixture thereof, about 0.2% to about 20% of one or more alkanolamines, and about 50% to about 94% of a sulfoxide, sulfoxone, or mixture thereof. Advantageously, the composition can remove copper from a copper substrate at a rate of less than about 10 &#x212b; per minute when the substrate is immersed in the composition which is held at 70&#xb0; C. for 30 minutes and rotated relative to the composition at about 200 revolutions per minute.

Sulfoxide pyrolid(in)one alkanolamine cleaner composition

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Sunnyvale, CA, United States of America

De-Ling Zhou