Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

De Kui Qi

Xuan Jie Liu

Fu Cheng Chen

Jue Lu

A semiconductor structure is provided and includes: a substrate, containing first doping ions and including a photosensitive region and a floating diffusion region; a deeply doped region, in the photosensitive region of the substrate and containing second doping ions; a floating diffusion area, in the floating diffusion region of the substrate and containing third doping ions; a gate structure on the substrate at a junction of the photosensitive region and the floating diffusion region; a sidewall spacer on the photosensitive region of the substrate, and on sidewalls and top of the gate structure in the photosensitive region; a first doped region located in the floating diffusion area and having fourth doping ions; a metal connection layer on the first doped region; an interlayer dielectric layer on the substrate exposed by the gate structure; and a contact plug, in the interlayer dielectric layer and electrically connected to the metal connection layer.

Semiconductor structure with metal connection layer

A method for manufacturing the image sensor includes providing a substrate structure; forming a mask layer on the substrate structure, the mask layer having openings; depositing a metal grid material covering a surface of the mask layer and a bottom of the openings; and stripping the mask layer for removing a portion of the metal grid material on the top surface of the mask layer. The substrate structure includes: a substrate having a first surface; a plurality of pixels in the substrate; isolation structures around each of the plurality of pixels; and an anti-reflective coating on the first surface of the substrate. The openings include first openings exposing a portion of the first surface of the substrate structure above the isolation structures. A remaining portion of the metal grid material at the bottom of the openings forms metal grids.

Image sensor with metal grids and manufacturing method thereof

A semiconductor structure and a fabrication method are provided. The fabrication method includes: providing a substrate, containing first doping ions and including a pixel region for forming a pixel structure; forming a deeply doped region, in the photosensitive region of the substrate and containing second doping ions; forming a floating diffusion area in the floating diffusion region of the substrate and containing third doping ions; forming a gate structure on the substrate at the junction of the photosensitive region and the floating diffusion region; forming a sidewall film covering the gate structure and the substrate; forming a sidewall spacer; forming a first doped region in the floating diffusion region on one side of the gate structure; forming a metal connection layer on the first doped region; forming an interlayer dielectric layer on the substrate; and forming a source/drain contact plug in the interlayer dielectric layer.

Growing community of inventors

Shanghai, China

De Kui Qi