Samsung Electronics Co., Ltd.

Dayeon Cho

Sangdo Park

Hyungock Kim

SungOk Lee

A semiconductor device includes standard cells in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, and filler cells between ones of the standard cells. Each of the standard cells includes an active region, a gate structure that intersects the active region, source/drain regions on the active region on both sides of the gate structure, and interconnection lines. Each of the filler cells includes a filler active region and a filler gate structure that intersects the filler active region. The standard cells include first to third standard cells in first to third rows sequentially in the second direction, respectively. First interconnection lines are arranged with a first pitch, second interconnection lines are arranged with a second pitch, and third interconnection lines are arranged with a third pitch different from the first and second pitches.

Semiconductor devices

An integrated circuit includes a standard cell continuously arranged on a first row and on a second row, the first row and second row extending parallel with each other in a first direction, the first row and the second row adjacent to each other in a second direction crossing the first direction, a first cell separator contacting a first row boundary of the standard cell on the first row and extending in the second direction, and a second cell separator contacting a second row boundary of the standard cell on the second row and extending in the second direction. The first cell separator and the second cell separator are discontinuous on a first row to second row boundary of the first row and the second row.

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Seoul, South Korea

Dayeon Cho