3m Innovative Properties Company

Dawn V Muyres

Tommie W Kelley

Todd D Jones

Mark J Pellerite

Larry D Boardman

Terrance P Smith

Timothy D Dunbar

Michael Albert Haase

Patrick R Fleming

Paul Frederic Baude

Steven D Theiss

Kevin Michael Lewandowski

Feng Bai

Tzu-Chen Lee

Erin A McDowell

Dennis Edward Vogel

Kim Marie Vogel

Vivian Wynne Jones

Brett J Sitter

Owen M Anderson

Jonathan T Kahl

Gordan A Kuhnley

Joshua J Loga

A polymeric film including a major surface having a plurality of intersecting extended structures is described. For at least a majority of the structures in the plurality of extended structures: each structure extends along a length of the structure, has an average width along a direction transverse to the length and generally along the first major surface, and has an average height along a direction generally perpendicular to the first major surface; and the average width of the structure may be in a range of 1 to 200 micrometers, the average height of the structure may be in a range of 1 to 200 micrometers, and the length may be at least 3 times the average width. The extended structures may be randomly or pseudorandomly oriented and may be formed by microreplicating a surface of a paper.

Polymeric film having structured surface

Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each Ris independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each Ris independently H, an aryl group or R; each Ris independently H or methyl; each Ris independently an alkyl group, a halogen, or R; each Ris independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R. These polymers are useful in electronic devices such as organic thin film transistors.

Organic polymers, electronic devices, and methods

Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Organic thin film transistor with polymeric interface

A method for circuit fabrication includes positioning first and second webs of film in proximity to each other, wherein the second web of film defines a deposition mask, and deposition material on the first web of film through the deposition mask pattern defined by the second web of the to create at least a portion of an integrated circuit.

In-line deposition processes for circuit fabrication

Organic polymers for use in laminates including capacitors, wherein the polymer includes repeat units of the formula: wherein: each Ris independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each Ris independently H, an aryl group or R; each Ris independently H or methyl; each Ris independently an alkyl group, a halogen, or R; each Ris independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R.

Organic polymers, laminates, and capacitors

Aperture masks and deposition techniques for using aperture masks are described. In addition, techniques for creating aperture masks and other techniques for using the aperture masks are described. The various techniques can be particularly useful in creating circuit elements for electronic displays and low-cost integrated circuits such as radio frequency identification (RFID) circuits. In addition, the techniques can be advantageous in the fabrication of integrated circuits incorporating organic semiconductors, which typically are not compatible with wet processes.

Aperture masks for circuit fabrication

Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each Ris independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each Ris independently H, an aryl group or R; each Ris independently H or methyl; each Ris independently an alkyl group, a halogen, or R; each Ris independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0&#x2013;3; with the proviso that at least one repeat unit in the polymer includes an R. These polymers are useful in electronic devices such as organic thin film transistors.

In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.

Surface modified organic thin film transistors

Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Growing community of inventors

Saint Paul, MN, United States of America

Dawn V Muyres