Siltronic Ag

Dawid Kot

Gudrun Kissinger

Timo Mueller

Andreas Sattler

Wilfried Von Ammon

Michael Gehmlich

Michael Boy

Robert Kretschmer

Timo Müller

A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9&#xd7;10atoms/cmand not more than 6.5&#xd7;10atoms/cmand a nitrogen concentration (new ASTM) of not less than 8&#xd7;10atoms/cmand not more than 5&#xd7;10atoms/cm, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3&#xd7;10cmand not more than 4&#xd7;10cm, as determined by IR tomography.

Semiconductor wafer made of single-crystal silicon and process for the production thereof

The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

Semiconductor wafer composed of monocrystalline silicon and method for producing it

Silicon wafers having an oxygen concentration of 5&#xb7;10to 7.5&#xb7;10cmhave the following BMD densities after the following thermal processes, carried out alternatively:

Silicon wafer and method for producing it

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Kunice, Poland

Dawid Kot