Kotura, Inc.

Kotusa, Inc.

Dawei Zheng

Dazeng Feng

Mehdi Asghari

Anthony Stephen Kewitsch

George A Rakuljic

Wei Qian

Joan Fong

Shirong Liao

Xiaoming Yin

Ning-Ning Feng

Zhian Shao

Lih-Jou Chung

Cheng-Chih Kung

Po Dong

Xavier Clairardin

Arlon Martin

The system includes a light-transmitting medium positioned on a base. The light-transmitting medium included a ridge and a slab region. The ridge extends upward from the slab region and defines a portion of a waveguide on the base. The waveguide is configured to guide a light signal through the device. The device also includes an avalanche effect light sensor positioned on the base and configured to detect the presence of the light signal. The light sensor includes a light-absorbing medium positioned on the ridge of the light-transmitting medium such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium. The light-transmitting includes a charge layer located at an interface of the light-transmitting medium and the light-absorbing medium. A multiplication region is formed in the slab regions of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during the operation of the light sensor.

System having avalanche effect light sensor with enhanced sensitivity

An optical device includes a light-transmitting medium positioned on a base. The light-transmitting medium defines a waveguide. The optical device also includes a light sensor. The light sensor includes a light-absorbing medium positioned on the base. A portion of the waveguide ends at a facet such that a first portion of a light signal being guided by the wavegide passes through the facet and a second portion of the light signal bypasses the facet and remains in the light-transmitting medium. The light-absorbing medium is positioned on the light-transmitting medium such that the light-transmitting medium is between the light-absorbing medium and the base. Additionally, the light-absorbing medium is positioned on the light-transmitting medium such that the light-absorbing medium receives the first portion of the light signal that passes through the facet. Further, the light-absorbing medium is configured such that the second portion of the light signal is coupled into the light-absorbing medium from the light-transmitting medium.

Optical device having partially butt-coupled light sensor

The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regions are positioned on opposing sides of the ridge. A light-absorbing medium is positioned to receive at least a portion of the light signal from the light-transmitting medium included in the waveguide. The light-absorbing medium is included in the ridge and also in the slab regions. The light-absorbing medium includes doped regions positioned such that an application of a reverse bias across the doped regions forms an electrical field in the light-absorbing medium included in the ridge.

Optical device having light sensor employing horizontal electrical field

A method of forming a light sensor array includes tuning a resistance level of a plurality of resistors. The resistors are included in a light sensor array for use with a positron emissision tomography (PET) scanner system. The light sensor array includes detection circuits that each includes one of the resistors connected in series with an avalanche photodiode.

Detector having tuned resistors

A sensor includes a carrier carrying a light sensor array. The light sensor array has pixels that are each configured to generate an electrical output in response to receiving a light photon. The light sensor array can be included in or on a wafer or can be built in or on a wafer. The sensor also includes electrical conductors through which the pixels electrically communicate with electronics on the carrier. Each of the electrical conductors is at least partially positioned in a recess that extends into the wafer.

System having reduced distance between scintillator and light sensor array

An optical device includes a phase modulator having a waveguide on a substrate. The phase modulator also includes an n-type region having a proximity to a p-type region that causes formation of a depletion region when a bias is not applied to the modulator. The depletion region is at least partially positioned in the light signal carrying region of the waveguide. The phase modulator is tuned by applying a reverse bias to the phase modulator. The reverse bias changes the size of the depletion region.

High speed optical phase modulator

An optical device includes a phase modulator positioned along a branch waveguide of a mach-zehnder interferometer. The phase modulator includes an n-type region having a proximity to a p-type region that causes a depletion region to form when a bias is not applied to the modulator. The depletion region is at least partially positioned in a light signal carrying region of the waveguide.

High speed optical intensity modulator

A method of fabricating an optical component includes forming a mask on an optical component precursor. The method also includes etching through at least a portion of the mask so as to etch an underlying medium concurrently with remaining mask and transfer a feature of an upper surface of the mask onto an upper surface of the underlying medium. The etch can be configured such that a ratio of the underlying medium etch rate to the mask etch rate is less than about 1.5:1. In some instances, the underlying medium is silicon and the mask is a photoresist.

Controlled selectivity etch for use with optical component fabrication

A method of forming an optical component includes forming a first mask on an optical component precursor. The first mask is formed with a plurality of waveguide portions extending from a common portion. Each waveguide portion is positioned so as to protect a waveguide region of the optical component precursor where a waveguide is to be formed. The method also includes forming a second mask between waveguide portions of the first mask. The resistance of the second mask to etching varies along at least one dimension of the second mask.

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Arcadia, CA, United States of America

Dawei Zheng