Future Wei Technologies, Inc.

Laxense Inc.

Huawei Technologies Co., Limited

Dawei Zheng

Xiao Andy Shen

Hongbing Lei

Qianfan Xu

Li Ping Yang

Tongqing Wang

Xiaochen Sun

Ningning Feng

Zhoufeng Ying

Xueyan Zheng

Jin Yao

YuSheng Bai

Xingyu Zhang

Morgan Chen

Huapu Pan

Yu Sheng Bai

Ge Yi

Hongmin Chen

Eric Dudley

Li Yang

An integrated transmitter chip having a transmitter block, the transmitter block having: a first power divider optically connected to a first input port; a second power divider optically connected to a second input port; a first plurality of optical channels optically branched from the first power divider; a second plurality of optical channels optically branched from the second power divider; a first multiplexer optically connected to a first optical channel of the first plurality of optical channels and a first optical channel of the second plurality of optical channels, and a second multiplexer optically connected to a second optical channel of the first plurality of optical channels and a second optical channel of the second plurality of optical channels. The integrated transmitter chip may be configured to utilize polarization division multiplexing or wavelength division multiplexing to combine optical signals depending on the application of the corresponding integrated transmitter chip.

Integrated multi-channel photonics transmitter chip having dual-channel multiplexers

A method and system for locking the resonance frequency of ring resonators by using laser sources to emit a plurality of different wavelengths, applying a tagging signal to each of the wavelengths, multiplexing the tagged wavelengths using a wavelength division multiplexor, coupling the multiplexed tagged wavelengths onto a bus waveguide, detecting the multiplexed tagged wavelengths with a first photodetector disposed before a first ring resonator and a second photodetector disposed after a last ring resonator of a plurality of ring resonators, sending the signals detected by the first and second photodetector to a processor, which identifies and processes the tagging signals, generating a control signal for each ring resonator, by the processor and applying the control signals to phase shifters on each ring resonator of the plurality of ring resonators to tune and align the resonance wavelengths of the ring resonators with the wavelengths of the corresponding laser sources.

System and apparatus of controlling ring resonator operating points

An integrated transmitter chip comprising: at least one input port disposed at a first end of the integrated transmitter chip; a first variable power divider optically connected to each input port of the at least one input port; a second and a third variable power dividers optically branched from each first variable power divider; a first and a second optical channel optically branched from the second variable power divider, a third and a fourth optical channel optically branched from the third variable power divider; and at least one WDM optically attached to corresponding optical channels and configured to selectively modify the polarization of and multiplex corresponding optical signals into a output optical signal, wherein a laser beam is launched into an input port, split by corresponding variable power dividers based upon each dividers corresponding splitting ratio, then multiplexed and combined into an output optical signal having dual polarization modes.

Integrated multi-channel photonics transmitter chip having variable power dividers

A method for fabricating a photonic integrated circuit (PIC) comprises providing a silicon-on-insulator (SOI) wafer comprising an insulator layer disposed between a base semiconductor layer and a SOI layer, wherein the SOI layer comprises a waveguide, providing at least one slot within the SOI layer, wherein the at least one slot is positioned on the same or opposite sides of the waveguide, and wherein the at least one slot is positioned at a predetermined distance away from the waveguide, and removing a portion of the insulator layer to form an etched-out portion of the insulator layer, wherein the etched-out portion is positioned directly beneath the waveguide, and wherein a width of the etched-out portion is at least the width of the waveguide.

Enabling thermal efficiency on a silicon-on-insulator (SOI) platform

An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation section coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.

Digital optical modulator for programmable n-quadrature amplitude modulation generation

An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

Interdigitated optical modulator

A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.

MOS capacitor optical modulator with transparent conductive and low-refractive-index gate

An apparatus comprises a substrate comprising a silicon dioxide (SiO) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

Inverse taper waveguides for low-loss mode converters

An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

A tunable optical system with hybrid integrated semiconductor laser is provided. The optical system includes a silicon-on-insulator (SOI) substrate; a first optical waveguide tunable comb filter formed at the first side of the SOI substrate; a second optical waveguide tunable comb filter with detuned filter response formed at the first side of the SOI substrate; an etched laser pit at the first side of the SOI substrate; a plurality of spacers formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; a plurality of bumping pads formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; and a laser chip flip-chip bonded at the first side of the SOI substrate supported by the spacers. Heating sections may be provided on the filters to tune the filters.

Tunable optical system with hybrid integrated laser

An optical system includes a silicon substrate, a 45-degree or 54.7-degree reflector formed in the silicon substrate, deeply etched double U-shape trenches formed in the silicon substrate, a thin film disposed on the reflector surface with total or partial optical refection, a top and bottom surface contacted p-i-n structure formed in the silicon substrate for optical power monitoring, a plurality of rectangular or wedge shaped spacers formed on top surface of the silicon substrate, and a surface emitting light source flip-chip bonded on the silicon substrate via the spacers.

Optical system with integrated photodetector using a self-aligned double U-groove structure

A Ge waveguide photo-detector fabricated on a silicon-on-insulator substrate is provided. It comprises a Ge waveguide detector end-coupled to a light-signal-carrying silicon waveguide, both disposed on a silicon-on-insulator (SOI) substrate. An electrical field is established along the direction of light propagation inside the Ge waveguide detector by doping the two opposite ends of the Ge detector with P or N type dopants. In result the height and width of the Si waveguide is decoupled from the speed of the Ge detector.

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Irvine, CA, United States of America

Dawei Zheng