Other

Johnson Research Development Company, Inc.

Johnson IP Holding, LLC

Davorin Babic

Lonnie G Johnson

Viet X Nguyen

Arshey Patadia

Alex Kropachev

Dragan Grubisic

David Ketema Johnson

Lazbourne Alanzo Allie

William L Rauch

Stanley Jones

Adrian M Grant

John M Baxley

Joykumar S Thokchom

Dragan Grubisik

Paul D Browne

The invention comprises a solid state infrared source and method of use thereof comprising: (1) an electrically conductive film, comprising a semi-transparent material, the semi-transparent material comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from the electrically conductive film transmit to an outer surface of the electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers; (2) a first silicon nitride layer; and (3) a second silicon nitride layer, the electrically conductive film positioned between the first silicon nitride layer and the second silicon nitride layer, where applying an electric current of less than one Watt through the electrically conductive film raises a temperature of the electrically conductive film to in excess of eight hundred degrees centigrade in less than twenty milliseconds resultant in the infrared emissions.

Electrically conductive-semitransparent solid state infrared emitter apparatus and method of use thereof

The invention comprises a solid state infrared source apparatus and method of use thereof, comprising: (1) an electrically conductive film comprising: an emission side and a back side opposite the emission side and a surface area to height ratio of at least five hundred to one; (2) a first dielectric film contacting the back side of the electrically conductive film; and (3) a reflective layer, the reflective layer embedded in the solid state source between the first dielectric film and a support layer, wherein the electrically conductive film emits infrared light upon warming with an electrical current during use, the infrared light sequentially reflecting off of the reflective layer, transmitting through the electrically conductive film, and emitting from the solid state source. Preferably the electrically conductive film comprises zinc oxide and the reflective layer is deposited into a basin in a second dielectric film.

Electrically conductive infrared emitter and back reflector in a solid state source apparatus and method of use thereof

A high capacity solid state composite cathode contains an active cathode material dispersed in an amorphous inorganic ionically conductive metal oxide, such as lithium lanthanum zirconium oxide and/or lithium carbon lanthanum zirconium oxide. A solid state composite separator contains an electronically insulating inorganic powder dispersed in an amorphous, inorganic, ionically conductive metal oxide. Methods for preparing the composite cathode and composite separator are provided.

High capacity solid state composite cathode, solid state composite separator, solid-state rechargeable lithium battery and methods of making same

The invention comprises an infrared source and method of use thereof comprising the steps of: (1) providing a solid state source, comprising: a film of oxide particles comprising an average particle size of less than ten micrometers, gaps between the oxide particles comprising an average gap width of less than ten micrometers, and a heating element embedded in the solid state source; (2) applying a pulsed current to the heating element to heat the heating element; and (3) heating the film of oxide particles to at least seven hundred degrees using thermal conduction from the heating element resultant in the film of oxide particles emitting infrared light in a range of 1.1 to 20 micrometers, where the infrared source operates continuously with heating and cooling of the oxide particles through a differential of at least 200&#xb0; C. occurs at least five and less than thirty times per second.

Solid state particulate metal oxide infrared emitter apparatus and method of use thereof

The invention comprises an infrared source and method of use thereof comprising the steps of: (1) providing a solid state source comprising: an electrically conductive zinc oxide film having a thickness of less than five micrometers and a film of metal oxide particles, the metal oxide particles comprising a mean diameter of less than ten micrometers; (2) passing an alternating, pulsed current through the zinc oxide film, the pulsed current heating the zinc oxide film to greater than 700&#xb0; C. in less than twenty milliseconds using less than one Watt, which results in a first infrared emission from the zinc oxide film; and (3) heating the film of metal oxide particles, using thermal conduction from the zinc oxide film, to at least 700&#xb0; C., resultant in a second infrared emission from the film of oxide particles, where the first and second infrared emissions exit the source through an emission side.

Dual emission layer solid state infrared emitter apparatus and method of use thereof

Amorphous lithium lanthanum zirconium oxide (LLZO) is formed as an ionically-conductive electrolyte medium. The LLZO comprises by percentage of total number of atoms from about 0.1% to about 50% lithium, from about 0.1% to about 25% lanthanum, from about 0.1% to about 25% zirconium, from about 30% to about 70% oxygen and from 0.0% to about 25% carbon. At least one layer of amorphous LLZO may be formed through a sol-gel process wherein quantities of lanthanum methoxyethoxide, lithium butoxide and zirconium butoxide are dissolved in an alcohol-based solvent to form a mixture which is dispensed into a substantially planar configuration, transitioned through a gel phase, dried and cured to a substantially dry phase.

Amorphous ionically conductive metal oxides and sol gel method of preparation

Ionically-conductive amorphous lithium lanthanum zirconium oxide

An amorphous lithium lanthanum titanate (LLTO) thin film is produced by the sol-gel method wherein a polymer is mixed with a liquid alcohol to form a first solution. A second solution is then prepared by mixing a lanthanum alkoxide with an alcohol. The first solution is then mixed with the lanthanum based second solution. A lithium alkoxide and a titanium alkoxide are then also added to the lanthanum based second solution. This process produces a batch of LLTO precursor solution. The LLTO precursor solution is applied to a substrate to form a precursor layer which is then dried. The coating techniques that may be used include spin coating, spraying, casting, dripping, and the like, however, the spin coating technique is the preferred method recited herein.

Amorphous lithium lanthanum titanate thin films manufacturing method

A thin film ceramic proton conducting electrolyte assembly () is provided having a includes a nanoporous, copper supporting substrate (), a temporary substrate pore filler material (), and a ceramic electrolyte layer () positioned upon the substrate (). The ceramic electrolyte layer may be made of a yttrium doped strontium zirconate. To produce the electrolyte the substrate pores () are filled with the pore filler material to provide a smooth surface upon which the electrolyte layer is deposited. The filler material is then removed from the pores and the substrate and electrolyte layer are annealed.

Thin film ceramic proton conducting electrolyte

A method of producing a passivated thin film material is disclosed wherein an insulating thin film layer (), having pinholes () therein, is positioned upon an underlying electrically conductive substrate (). The thin film layer is then electroplated so that the pinholes are filled with a reactive metal. The thin film layer and substrate are then immersed within a silicon doped tetramethylammonium hydroxide (TMAH) solution. Excess silica within the solution precipitates onto the top surfaces of the aluminum plugs () to form an electrically insulative cap which electrically insulates the top of the aluminum plug. As an alternative, the previously described metal plugs may be anodized so that at least a portion thereof becomes an oxidized metal which is electrically insulative.

Passivated thin film and method of producing same

A nanomachined and micromachined electrode () is disclosed that is produced by providing a layer of aluminum () positioned upon a conductive substrate (), anodizing the layer of aluminum to produce a layer of aluminum oxide () having an array of pores (), depositing a sacrificial metal () within the pores of the aluminum oxide layer, etching the aluminum oxide layer so as to leave an array of sacrificial metal rods (), depositing a layer of electrode material () between the array of sacrificial metal rods, and etching the sacrificial metal rods so that a layer of copper remains having an array of pores () where the sacrificial metal rods had existed. The layer of copper is the electrode ().

Growing community of inventors

Marietta, GA, United States of America

Davorin Babic