Asml Netherlands B.v.

Davit Harutyunyan

Patrick Warnaar

Hendrik Jan Hidde Smilde

Roy Werkman

Bastiaan Onne Fagginger Auer

Everhardus Cornelis Mos

Frank Staals

Thomas Theeuwes

Jochem Sebastiaan Wildenberg

Maxim Pisarenco

Yana Cheng

Erik Johannes Maria Wallerbos

Chenxi Lin

Simon Philip Spencer Hastings

Vahid Bastani

Fuming Wang

Cornelis Johannes Rijnierse

Hugo Thomas Looijestijn

Tom Van Hemert

Fei Jia

Youping Zhang

Boris Menchtchikov

Yi Zou

Hakki Ergün Cekli

David Frans Simon Deckers

Cyrus Emil Tabery

Maxime Philippe Frederic Genin

Tzu-Chao Chen

Samee Ur Rehman

Jeffrey Thomas Ziebarth

A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

Method for determining root cause affecting yield in a semiconductor manufacturing process

A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

Method for determining corrections for lithographic apparatus

In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

Metrology method and apparatus, substrate, lithographic system and device manufacturing method

A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

Method for determining contribution to a fingerprint

A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

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Eindhoven, Netherlands

Davit Harutyunyan