Micron Technology Incorporated

Turboden, S.p.a.

Intel Corporation

Turboden S.r.l.

Turbodem S.r.l.

Davide Colombo

F Daniel Gealy

Andrea Gotti

Roberto Bini

Silvia Borsari

Mario Gaia

Davide Erbetta

Kuo-Wei Chang

Terrence B McDaniel

Yi Fang Lee

Claudio Pietra

Vinay Nair

Russell A Benson

Luca Fumagalli

Yan Li

Tong Liu

Ying Rui

Austin Johnson

A method of forming a microelectronic device comprises forming a conductive shielding material over a conductive shielding structure and a first dielectric structure horizontally adjacent the conductive shielding structure. A second dielectric structure is formed on first dielectric structure and horizontally adjacent the conductive shielding material. The conductive shielding material and the second dielectric structure are patterned to form fin structures extending in parallel in a first horizontal direction. Each of the fin structures comprises two dielectric end structures integral with remaining portions of the second dielectric structure, and an additional conductive shielding structure interposed between the two dielectric end structures in the first horizontal direction. Conductive lines are formed to extend in parallel in the first horizontal direction and to horizontally alternate with the fin structures in a second horizontal direction orthogonal to the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.

Methods used in the fabrication of integrated circuitry

Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

Apparatuses comprising protective material along surfaces of tungsten-containing structures

A mixed flow turbine () for the expansion phase of steam thermodynamic cycles of an organic Rankine cycle provided with a first section (A) in which a first expansion of a main flow of working fluid takes place, in a substantially radial direction having at least one stator stage (S, S, . . . Sn) and at least one rotor stage (R, R, . . . Rn) of a second section (B) in which a second expansion of the main flow of the working fluid takes place in a substantially axial direction having at least one stator stage and at least one rotor stage and, between the first and the second section, with at least one angular stator stage (S) comprising an array of angular blades which deflect the main flow of working fluid from the initial radial direction to a substantially axial direction. The turbine () is provided with means for injection () and/or means for extraction () of a second flow of working fluid, placed in proximity of the stator stage (S).

Mixed flow optimized turbine

A turbine of an organic Ranking cycle (ORC) is described. The turbine includes a shaft supported by at least two bearings and a plurality of axial stages of expansion, defined by arrays of stator blades alternated with arrays or rotor blades. The rotor blades are sustained by corresponding supporting disks. A main supporting disk is directly coupled to the shaft in an outer position with respect to the bearings, and the remaining supporting disks are constrained to the main supporting disk, and one to the other in succession, but not directly to the shaft. Some of the remaining supporting disks are constrained to the main supporting disk and cantileverly extend from the same side of the bearings that support the shaft, so that the center of gravity of the rotor part of the turbine is shifted more towards the bearings.

Multistage turbine preferably for organic rankine cycle ORC plants

Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described.

Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

An embodiment of the present invention is a method of controlling an Organic Rankine Cycle system, the system comprising at least one feed pump (), at least one heat exchanger (), an expansion turbine () and a condenser (), the organic Rankine Cycle comprising a feeding phase of an organic working fluid, a heating and vaporization phase of the same working fluid, an expansion and condensation phase of the same working fluid, wherein said method controls an adjusted variable (X), which is a function of an overheating of the organic fluid, by means of a controller () that acts by varying a control variable (Y), which is a parameter of the organic fluid in its liquid phase, and wherein the adjusted variable (X) is a temperature difference (&#x394;T) between a current temperature of the organic fluid in vapor phase at the turbine inlet and a temperature threshold (Tlim), under which the expansion phase involves the formation of a liquid phase of the organic fluid.

Control method for an organic rankine cycle

A phase-change memory cell having a reduced electrode-chalcogenide interface resistance and a method for making the phase-change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that and provides a reduced resistance between the chalcogenide-based phase-change memory layer and the electrode layer. Exemplary embodiments provide that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride, or a molybdenum boride, or a combination thereof. In one exemplary embodiment, the interface layer comprises a thickness of between about 1 nm and about 10 nm.

Electrode materials and interface layers to minimize chalcogenide interface resistance

A fluid sealing device for rotating machines having a rotor part including at least one disk carried by a rotating shaft rotating in and relatively to a stator part in the presence of a fluid is disclosed. The rotating shaft has a sealing system defining a first environment at a first pressure. The stator part has a wall in front of the disk of the stator part defining a second environment therewith containing a fluid at a second pressure. The device includes a movable ring placed between the wall of the stator part and the disk of the rotor part and has a front sealing gasket facing towards the disk. The movable ring is moved in the active position when the rotating machine is stopped to prevent the fluid passage from one environment to the other.

Fluid sealing device for rotating machines

Devices include multiple phase change materials connected in parallel between electrodes. Memory cells with multiple parallel phase change materials can be programmed to transition among more than two states representing multiple bits of information. Methods for manufacture and use are also disclosed.

Growing community of inventors

Milan, Italy

Davide Colombo