International Rectifier Corporation

Siliconix Technology C. V.

Davide Chiola

Kohji Andoh

Silvestro Fimiani

Daniel Marvin Kinzer

Donald He

Ritu Sodhi

Chiu Ng

Zhi He

Fabio Necco

Fabrizio Rue Redda

Fabrizio Ruo Redda

He Zhi

A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

Merged P-i-N Schottky structure

A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination trench. Following a sacrificial oxide layer formation and removal, sidewall and bottom surfaces of the trenches are oxidized. A second nitride layer is then applied to the substrate and etched such that the second nitride layer covers the oxide layer on the trench sidewalls but exposes the oxide layer on the trench bottom surfaces. The trench bottom surfaces are then re-oxidized and the remaining second nitride layer then removed from the sidewalls, resulting in an oxide layer of varying thickness being formed on the sidewall and bottom surfaces of each trench. The trenches are then filled with a P type polysilicon, the first nitride layer removed, and a Schottky barrier metal applied to the substrate surface.

Trench schottky barrier diode with differential oxide thickness

A schottky diode of the trench variety which includes a trench termination having a thick insulation layer that is thicker than the insulation layer inside the trenches in its active region.

Thick field oxide termination for trench schottky device

Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

The gate oxide in the trenches of a trench type Schottky device are formed by oxidizing a layer of polysilicon deposited in trenches of a silicon or silicon carbide substrate. A small amount of the substrate is also oxidized to create a good interface between the substrate and the oxide layer which is formed. The corners of the trench are rounded by the initial formation and removal of a sacrificial oxide layer.

Process for forming thick oxides on Si or SiC for semiconductor devices

An IGBT for controlling the application of power to a plasma display panel has an increased current conduction capability and a reduced conduction loss at the expense of a reduced safe operating area. For a device with a 300 volt breakdown voltage rating, the die has a substrate resistivity less than 10 m ohm cm; a buffer layer thickness of about 8 &#x3bc;m resistivity in the range of 0.05 to 0.10 ohm cm, and an epi layer for receiving junction patterns and trenches, which has a thickness of from 31 to 37 &#x3bc;m and resistivity in te range of 14 to 18 ohm cm.

Trench IGBT for highly capacitive loads

A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.

Integrated fet and schottky device

A trench type Schottky device has a guard ring diffusion of constant depth between the outermost of an active trench and an outer surrounding termination trench. The junction curvature of the guard ring diffusion is suppressed or cut out by the trenches.

Recessed termination for trench schottky device without junction curvature

Trench Schottky barrier diode with differential oxide thickness

A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device.

Termination design with multiple spiral trench rings

A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.

Fast recovery diode with a single large area p/n junction

Merged P-i-N schottky structure

A method for adjusting the resistivity in the surface of a semiconductive substrate including selective measurement and counter-doping of areas on a major surface of a semiconductive substrate.

Process for preparation of semiconductor wafer surface

Integrated FET and schottky device

A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches.

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Marina Del Rey, CA, United States of America

Davide Chiola