Lam Research Corporation

Other

Multimedia Content Management LLC

David Z Carman

Robert M Burke, Ii

Shijian Li

Travis R Taylor

Chander Radhakrishnan

Harmeet Singh

Hong Shih

Armen Avoyan

Anthony De La Llera

Shashank C Deshmukh

Saurabh J Ullal

Devin Ramdutt

A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless cleaning recipe is also described.

Waferless clean in dielectric etch process

There is provided a system for regulating access and managing distribution of content in a network, such as the Internet. The system includes communication gateways, installed at a subscriber site, internet control points, installed remotely, and various network elements installed throughout the network. The communication gateways and network elements operate in conjunction with the internet control points to restrict or allow access to specified Internet sites and to manage efficient distribution of content such as music, video, games, broadband data, real-time audio and voice applications, and software to subscribers.

System for regulating access to and distributing content in a network

An apparatus and system for plasma processing a substrate using RF power includes a chamber having walls for housing an electrostatic chuck (ESC) and a top electrode. The top electrode is oriented opposite the ESC to define a processing region. An inner line with a tubular shaped wall is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring within the chamber to provide an RF power return path during plasma processing.

Symmetric RF return path liner

A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode.

Methodology for cleaning of surface metal contamination from an upper electrode used in a plasma chamber

A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.

Plasma confinement ring assembly for plasma processing chambers

Growing community of inventors

Tulsa, OK, United States of America

David Z Carman