International Business Machines Corporation

David William Mann

Daniel Mark Dreps

William Frederick Lawson

David Jia Chen

Kevin Charles Gower

Kyu-hyoun Kim

Robert Brett Tremaine

Michael Anthony Sorna

Michael Kevin Kerr

James A Mossman

William M Zevin

A method and apparatus for determining correct timing for receiving, in a host in a memory system, of a normal toggle transmitted by an addressed memory chip on a bidirectional data strobe. An offset in the data strobe is established, either by commanding the addressed memory chip, in a training period, to drive the data strobe to a known state, except during transmission of a normal toggle, or by providing a voltage offset between a true and a complement phase in the data strobe, or by providing a circuit bias in a differential receiver on the host the receives the data strobe. A series of read commands are transmitted by the host to the addressed memory chip, which responds by transmitting the normal toggle. Timing of reception of the normal toggle as received by the host chip is adjusted until the normal toggle is correctly received.

Strobe offset in bidirectional memory strobe configurations

An I/O driver has v/i characteristic control for maintaining a substantially flat output impedance response using a transmission gate configuration at an I/O output pad. The configuration includes a linear resistive element electrically connected at an I/O pad for limiting a processed data I/O signal, an active impedance element for receiving and processing the data signal, which comprises data represented by a series of voltage state transitions, and pull-up and pull-down array calibration words, for generating and outputting a processed I/O output signal to the resistive element to output a substantially flat v/i response at switching of the data signal.

I/O driver for integrated circuit with output impedance control

A memory interface device, system, method, and design structure for controlling for variable impedance and voltage in a memory system are provided. The memory interface device includes a calibration cell configurable to adjust an output impedance relative to an external reference resistor, and driver circuitry including multiple positive drive circuits and multiple negative drive circuits coupled to a driver output in a memory system. The memory interface device further includes impedance control logic to adjust the output impedance of the calibration cell and selectively enable the positive and negative drive circuits as a function of a drive voltage and a target impedance.

Controlling for variable impedance and voltage in a memory system

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Endwell, NY, United States of America

David William Mann