Praxair Technology, Inc.

Entegris, Inc.

Intel Corporation

David Walter Peters

Ronald F Spohn

Scott L Battle

Bryan Clark Hendrix

David Michael Thompson

Weimin Li

Thomas H Baum

John N Gregg

Carlo Waldfried

William Hunks

Robert Wright, Jr

Richard A Cooke

Scott Houston Meiere

I-Kuan Lin

David James Eldridge

Nilesh Gunda

Derrik S Helfer

Adrien Lavoie

Valery M Dubin

Chongying Xu

Kevin O'Brien

Philip S H Chen

Juan E Dominguez

Thomas M Cameron

Steven W Johnston

John M Cleary

John D Peck

Julie Cissell

Philip Sh Chen

David M Thompson

Michael Thomas Iii Mosscrop

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Coatings for enhancement of properties and performance of substrate articles and apparatus

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

Cobalt precursors

A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

Chemical delivery system and method of operating the chemical delivery system

Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400&#xb0; C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.

Cobalt precursors for low temperature ALD or CVD of cobalt-based thin films

A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and contacting the precursor vapor with a substrate under vapor deposition conditions effective for depositing on the substrate (i) high purity, low resistivity cobalt or (ii) cobalt that is annealable by thermal annealing to form high purity, low resistivity cobalt. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms an electrode, capping layer, encapsulating layer, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel display, or solar panel.

Cobalt CVD

A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

Fluorine free tungsten ALD/CVD process

A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe); Ti(NMeEt); Ti(NEt);TiCl4; tBuN&#x2550;Nb(NEt); tBuN&#x2550;Nb(NMe); t-BuN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NEt); t-AmN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NMe); t-AmN&#x2550;Nb(OBu-t); Nb-13; Nb(NEt); Nb(NEt); Nb(N(CH)); Nb(OC2H); Nb(thd)(OPr-i); SiH(OMe); SiCU; Si(NMe); (MeSi)NH; GeRx(OR)wherein x is from 0 to 4, each Ris independently selected from H or C-Calkyl and each Ris independently selected from C-Calkyl; GeCl; Ge(NR)wherein each Ris independently selected from H and C-Calkyl; and (RGe)NH wherein each Ris independently selected from C-Calkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

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This invention relates to a vapor or liquid phase reagent dispensing apparatus having a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of said metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Reagent dispensing apparatus and delivery method

This invention relates to vapor phase reagent dispensing apparatus having a bubbler tube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Bubbler apparatus and delivery method

This invention relates to a vapor phase reagent dispensing apparatus having a bubbler tube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus further has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Bubbler apparatus and method for delivering vapor phase reagent to a deposition chamber

This invention relates to a liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus further has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Diptube apparatus and method for delivering vapor phase reagent to a deposition chamber

This invention relates to a vapor or liquid phase reagent dispensing apparatus having a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus also has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Growing community of inventors

Kingsland, TX, United States of America

David Walter Peters