Intel Corporation

David W Staines

Aleksandar Aleksov

Tatyana N Andryushchenko

Mauro J Kobrinsky

Grant M Kloster

Rajendra C Dias

Srinivas V Pietambaram

Dilan Seneviratne

Javier Soto Gonzalez

Shriram Ramanathan

Jihperng Leu

Manish Dubey

Alejandro X Levander

Rafiqul Islam

Embodiments of the invention include a microelectronic device and methods for forming a microelectronic device. In an embodiment, the microelectronic device includes a semiconductor die that has one or more die contacts that are each electrically coupled to a contact pad by a conductive trace. The semiconductor die may have a first elastic modulus. The microelectronic device may also include an encapsulation layer over the semiconductor die and the conductive trace. The encapsulation layer may have a second elastic modulus that is less than the first elastic modulus. The microelectronic device may also include a first strain redistribution layer within the encapsulation layer. The first strain redistribution layer may have a footprint that covers the semiconductor die and a portion of the conductive traces. The strain redistribution layer may have a third elastic modulus that is less than the first elastic modulus and greater than the second elastic modulus.

Stretchable electronics fabrication method with strain redistribution layer

Generally discussed herein are systems and methods that can include a stretchable and bendable device. According to an example a method can include (1) depositing a first elastomer material on a panel, (2) laminating trace material on the elastomer material, (3) processing the trace material to pattern the trace material into one or more traces and one or more bond pads, (4) attaching a die to the one or more bond pads, or (5) depositing a second elastomer material on and around the one or more traces, the bonds pads, and the die to encapsulate the one or more traces and the one or more bond pads in the first and second elastomer materials.

Bendable and stretchable electronic devices and methods

In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for gradient encapsulant protection of devices in stretchable electronic. For instance, in accordance with one embodiment, there is an apparatus with an electrical device on a stretchable substrate; one or more stretchable electrical interconnects coupled with the electrical device; one or more electrical components electrically coupled with the electrical device via the one or more stretchable electrical interconnects; and a gradient encapsulating material layered over and fully surrounding the electrical device and at least a portion of the one or more stretchable electrical interconnects coupled thereto, in which the gradient encapsulating material has an elastic modulus greater than the stretchable substrate and in which the elastic modulus of the gradient encapsulating material is less than the electrical device. Other related embodiments are disclosed.

Gradient encapsulant protection of devices in stretchable electronics

A three-dimensional integrated circuit formed by applying a material to fill a gap between coupled wafers and slicing the coupled wafers into dice. A method for filling a gap between coupled wafers. Various embodiments include at least one of spinning a coupled wafer pair, drilling a hole into one of the coupled wafers, and using a vacuum to aid in the dispersion of the material.

Method to fill the gap between coupled wafers

Treatment of dielectric material includes using a directed energy to break bonds in a dielectric material and a reactive gas to repair those bonds with an element of the reactive gas. The treated dielectric material may exhibit greater mechanical strength without a significantly greater dielectric constant. A treatment reactor including a directed energy source apparatus and a delivery mechanism to deliver the reactive gas is also described.

Dielectric material treatment

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Portland, OR, United States of America

David W Staines