Advanced Technology Materials, Inc.

Other

Microchem Inc.

Macdermid Acumen, Inc.

David W Minsek

Thomas H Baum

David Daniel Bernhard

Melissa K Rath

Michael B Korzenski

Martha M Rajaratnam

Chongying Xu

Lev Taytsas

Melissa K Murphy

William A Wojtczak

Eliodor G Ghenciu

Ma Fatima Seijo

Daniel J Nawrocki

Weihua Wang

Matthew Healy

Eric L Alemy

A method of electroplating metal onto a transparent conductive oxide layer is described. The method comprises the steps of a) electroplating a zinc or zinc oxide seed layer directly onto the transparent conductive oxide layer and thereafter, b) electroplating one or more additional metal layers over the zinc layer. The one or more additional metal layers may include a cobalt strike layer electroplated over the zinc or zinc oxide seed layer and another metal layer such as copper, electroplated over the cobalt strike layer.

Electroplating of metals on conductive oxide substrates

An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

Oxidizing aqueous cleaner for the removal of post-etch residues

A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.

Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition

Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Photoresist removal

A method and composition for plating metal contacts on photovoltaic solar cells is described. The cell is immersed in an aqueous bath containing platable metal ions and a solubilizing agent for aluminum or aluminum alloy ions from the back side of the solar cell. The cell is then exposed to light, causing the two sides of the cell to become oppositely charged. The metal ions are plated without requiring an external electrical contact.

Light induced plating of metals on silicon photovoltaic cells

A method and composition for plating metal contacts on photovoltaic solar cells is described. The cell is immersed in an aqueous bath containing platable metal ions and a chemical reducing agent. The cell is then exposed to light, causing the two sides of the cell to become oppositely charged. The metal ions are plated without requiring an external electrical contact, without backside anodic corrosion and without the need for backside sacrificial material.

Light induced electroless plating

A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate

An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings

Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

Growing community of inventors

New Milford, CT, United States of America

David W Minsek