Crystal Photonics, Inc.

David W Hill

John Joseph Gallagher

Mitch M C Chou

Herbert Paul Maruska

Bruce H T Chai

A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlOsubstrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlOsubstrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 10cm.

Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer

Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer

A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.

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Orlando, FL, United States of America

David W Hill