Texas Instruments Corporation

Litton Systems, Inc.

David W Buck

Alan Dee Rose

Kenneth W Sauter

Gabriel George Barna

Michael R Saldana

Roger A Robbins

Terry D Morris

Michael D Waterman

James G Winkel

Donald E Brown

David A Crosby

A battery adapter (A) replaces two batteries ( ) with a single battery ( ) housed within a compartment ( ) of a battery powered electrical device (D). An electrically conductive housing ( ) adapted to replicate a selected battery and fit within a space adapted to house two of the selected sized batteries. A step up circuit ( ) mounted within the battery housing ( ) receives an electrical signal from a single battery ( ) and transforms the voltage of the electrical signal to simulate an electrical signal from two electrically connected selected batteries ( ).

Battery adapter for night vision device

A transportable power source (P) for an image viewing device (D) includes a battery pack housing assembly ( ) to internally hold a first battery pack ( ). An electrical interface circuit ( ) receives an input voltage level ( ) and provides a resulting output voltage level ( ) as an output therefrom to operate the viewer device (D). The interface circuit ( ) receives a selected first input voltage level ( ) from the first battery pack ( ). Alternatively, the interface circuit ( ) receives a selected second input voltage level ( ) from a power supply source (S) external to the battery pack housing ( ). The interface circuit ( ) further includes a switch ( ) for selecting between sources of input voltage levels from among at least the first input voltage level ( ) and the second input voltage level ( ). The switch ( ) also selectively controls the source for the resulting output voltage level ( ).

Low profile battery pack with aircraft power provisions

A probe (,) has a main body (,), an input side (,) and an output side (,). The main body (,) has a cavity (,) to receive an insulator (,). The insulator (,) has a current slit (,) and a voltage slit (,) aligned with a first aperture (,) and a second aperture (,). An inner conductor extends through the insulator (,) from the input side (,) to the output side (,) of the main body (,). A current sensor (,) inserts into the first aperture (,) and the current slit (,). A voltage sensor (,) inserts into the second aperture (,) and the voltage slit (,). A radio frequency signal on a transmission line having a same impedance as the probe (,) enters the inner conductor (,) at the input side (,), induces a current onto the current sensor (,) and a voltage onto the voltage sensor (,). The induced current and voltage can be measured to monitor the characteristics of the transmission line.

Probe for monitoring radio frequency voltage and current

A system and process for analyzing the plasma discharge for various frequency components that can be correlated to wafer, chamber or equipment conditions. This system and process monitors (step 210), by using optical or electrical signals from the plasma, the low frequency plasma variations (step 220) generated during the wafer manufacturing process. For example, in endpoint detection applications, the amplitude variations of the plasma glow at a selected audio frequency, chosen for sensitivity to the etched material, is used to generate the endpoint signal (step 230). This endpoint signal has a potential response time equal to one cycle of the selected frequency plus minimal filtering due to noise reduction. To extract the vital parameters from the plasma glow, DSPs for frequency analysis or simple frequency filtering methods can be used.

Plasma etching with fast endpoint detector

A method and apparatus is provided for reducing wall erosion in a plasma containment tube (20), such as, for example, a quartz plasma tube (20) used in a microwave-induced plasma reaction process for etching semiconductor wafers. A pure benign or non-corrosive gas (Ar) is introduced into the 'upstream' section (22a) of the tube (22), where the microwave energy is imparted to create a plasma. The activated benign gas flows 'downstream' through a flange (28), preferably made of quartz, which is seated on o-rings (50) inside a water-cooled metal flange (48). These sealing o-rings (50) are thus cooled and removed from the ultraviolet light created by the plasma. The corrosive etchant gas (SF.sub.6) is introduced into the 'downstream' section (22b) of the tube (22) beyond the flange (28), where it is activated by the benign gas (Ar). The benign gas (Ar) flows principally along the inner sidewalls of the tube (22), and the etchant gas (SF.sub.6) is thus principally contained by the benign gas (Ar) in the center of this section (22b) of the tube. This 'downstream' section (22b) of the tube (22) is surrounded by a water jacket (24), which channels coolant around the outer surface of the tube (22b). Consequently, etching erosion of the inner surface of the tube (22) is minimized in the 'upstream' or microwave section (22a) where the plasma is hottest, and also in the 'downstream' section (22b) where the corrosive etchant gas (SF.sub.6) is activated.

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Mesquite, TX, United States of America

David W Buck