Jds Uniphase Corporation

Lumentum Operations LLC

David Venables

Zhong Pan

Victor Rossin

Craig M Ciesla

Erik Paul Zucker

Boris Kharlamov

Justin L Franke

Arnaud Fily

Jingcong Wang

A light-emitting device may comprise a set of layers comprising a substrate layer, and a set of epitaxial layers deposited on the substrate layer. The set of epitaxial layers may include a strained layer. The strained layer may include a set of active zones to be used to generate optical gain. The light-emitting device may comprise a set of trenches etched into a subset of the set of layers of the light-emitting device. The set of trenches may prevent a set of defects or dislocations in a wafer from which the light-emitting device was formed from propagating into the set of active zones.

Trenches for increasing a quantity of reliable chips produced from a wafer

A light source including a laser diode, and a method of operating a light source including a laser diode are disclosed. A driving current of the laser diode is dithered to cause a near-field light intensity distribution at an end facet to be perturbed, thereby reducing a time-averaged local intensity of the laser light at the end facet of the laser diode. The reduced time-averaged intensity reduces a possibility of a damage of the end facet.

Laser diode light source

A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer.

Photodiode with high ESD threshold

The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping process incorporating a solid source diffusion in combination with conventional gas source diffusion. The solid source diffusion material is selected for its solubility to the dopant compared to the solubility of the multiplication layer to dopant. The solid source has a diameter between the first and second diffusion windows. Thus, there are three distinct diffusion regions during the second diffusion. The dopant in the multiplication layer at the edge region, the dopant from the solid source material with a relatively higher dopant concentration (limited by the solubility of the dopant in the solid source material) at the intermediate region, and the central region exposed to an infinite diffusion source from the solid source material as it is continually charged with new dopant from the external gas source. The result is that both the dopant concentration and the diffusion depth decrease gradually from the center to the edge of the device. This tailored diffusion profile enables control of the electric field distribution such that edge breakdown is suppressed.

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Sunnyvale, CA, United States of America

David Venables