Commissariat a L'energie Atomique Et Aux Energies Alternatives

Thomson Licensing

Commissariat a L'energie Atomique

Alcatel Lucent

Aledia

Commissariat a L'energie Atomique Et Aux Energies

Thomson Licensing S.a.

David Vaufrey

Christophe Prat

Hubert Bono

Tony Maindron

Philippe Le Roy

Salvatore Cina

Benoit Racine

Philippe Gilet

Xavier Hugon

Gunther Karl Haas

Bérangère Hyot

Christophe Fery

Armand Bettinelli

Olivier Billoint

Thierry Flahaut

Jean-Claude Martinez

Henri Doyeux

Frédéric Sermet

Mohamed Ben Khalifa

Corentin Le Maoult

Emilie Bialic

Dinh-Chuong Nguyen

Hélène Le Cloarec

Benoît Racine

A diode includes a stack of semiconductor layers and an active area arranged within the stack. The stack includes a lateral surface. The diode includes a first passivation layer and a second passivation layer, the first passivation layer being in contact with the lateral surface, and the second passivation layer being in contact with the lateral surface. The second passivation layer is formed partially on the first passivation layer.

Diode comprising at least two passivation layers, in particular formed of dielectrics, which are locally stacked to optimise passivation

A light-emitting diode includes a stack of semiconductor layers including a first face and a second face that are opposite one another relative to a thickness of the stack, a first electrode including a face in contact with the first face of the stack, and a second electrode in contact with the stack. Moreover, the light-emitting diode is such that a recess is formed in the second face of the stack which results in the stack including a thinned part, the face of the first electrode in contact with the first face is in contact only with the thinned part of the stack, and the second electrode is in contact with a zone of the stack separate from the thinned part of the stack.

Light-emitting diode comprising a stack with a thinned part, and method for developing the light-emitting diode

The structure intended to emit electromagnetic radiation, comprises first and second electrodes configured so as to allow carriers to be injected into at least one semiconductor-based stack with a view to making them recombine in an active zone of the stack in order to form all or some of the electromagnetic radiation to be emitted. The first electrode has at least one first face for injecting carriers into the stack, said face being oriented in a different direction to the direction in which the stack is formed. The second electrode comprise a second face for injecting carriers into the stack, wherein said second injection face comprises a first portion facing the first electrode and a second portion for which the first electrode is not facing, and a dielectric element, making contact with the first electrode, is interposed between at least one part of the first electrode and at least one part of the first portion.

Emissive structure with lateral carrier injection

The emissive device includes first and second adjacent pixels () sharing a common semiconductor light-emitting stack () and each defining an area () of photon emission. The first and second pixels () are configured in such a way that supplying current to the first pixel () causes photons to be emitted, by the light-emitting stack (), only in the emission area () of said first pixel ().

Emissive device including first and second adjacent pixels sharing the same semiconductor light-emitting stack

The light-emitting diode comprises a first electrode intended to inject carriers of a first type into a stack of the light-emitting diode and arranged on an emissive face of the stack, a second electrode intended to inject carriers of a second type into the stack, and an emissive surface delimited by areas of the emissive face of the stack not covered by the first electrode. The first electrode is configured in such a way that any point of the emissive surface is situated no more than a predetermined distance from the first electrode dependent on the spreading length of the light-emitting diode. The method comprises a step of determining the spreading length of the light-emitting diode intended to be equipped with the first electrode and a step determining a characteristic of the first electrode from the determined spreading length.

Method regarding a light-emitting diode for which the arrangement of an electrode on an emitting face is determined as a function of the spreading length of the current in said light-emitting diode

A semiconducting structure configured to emit electromagnetic radiation. The structure includes a first zone and a second zone with first and second types of conductivities respectively opposite to each other, the first and second zones being connected to each other to form a semiconducting junction. The first zone includes at least a first and a second part, the first and the second parts being separated from each other by an intermediate layer, as a spreading layer, extending approximately parallel to a junction plane along a major part of the junction. The spreading layer can cause spreading of carriers in the plane of the spreading layer.

Semiconductor structure and method for manufacturing a semiconductor structure

The invention relates to a method for optimizing the data rate, in a wireless communication system comprising a LED forming an emitting device, and a photodetector forming a receiving device. For a given value of a DC component of the supply signal of the LED, the modulation amplitude of an AC component of this supply signal is adjusted step by step, so as to improve the transmission quality of the signal provided by the LED and received by the photodetector. The invention also relates to an optimization module implementing such a method. Alternatively, the modulation amplitude of the AC component of the supply signal is set, and the value of the DC component is adjusted step by step.

Optimizing the rate in a Li-Fi system

A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.

Optoelectric device and method for manufacturing the same

The invention concerns an organic light-emitting diode comprising a lower electrode () and an upper electrode (), an electroluminescent organic layer (), and at least one doped organic layer () in contact with one of said electrodes. The invention is characterized in that the doping is carried out using an alkaline-earth element or lanthanide, and the diode is heat-treated at temperature preferably not less than 60&#xb0; C. for more than one hour. The invention enables the lighting performance of the diode to be considerably improved.

Organic light-emitting diode with doped layers

Method for manufacturing at least one semiconductor structure () on the surface () of a substrate () wherein the surface comprises silicon. The method comprises steps consisting of providing the substrate (), forming in contact with an area () of the surface (), referred to as the formation area, a layer () of a first material, the remainder () of the surface (), referred to as the free area, remaining free from the first material, the dimensions of the formation area () and the first material being suitable for forming the structure (), the first material comprising gallium, the formation of said layer () taking place at a temperature less than 600&#xb0; C., and forming the structure () in contact with the layer ().

Method for manufacturing a semiconductor structure and semiconductor component comprising such a structure

A pixel with variable chromatic coordinates comprises a plurality of color sub-pixels consisting of a light emitter and a color filter. The light emitters are identical and have an emission spectrum that is able to be modulated according to their supply voltage and/or current. The pixel control circuit supplies each color sub-pixel with a supply voltage and/or current dependent on the color of the sub-pixel for its emission spectrum to approximate the transmission spectrum of the associated color filter. Control means enable the application time of the supply voltage and/or current to be modified according to the color of the sub-pixel to obtain a predetermined mean luminance during a predetermined period.

Display device based on pixels with variable chromatic coordinates

The invention provides an organic light-emitting diode which includes at least two electroluminescent layers (ELR, ELB), both of which are fluorescent or phosphorescent and emit at different wavelengths, as well as a hole- and electron-conducting buffer layer (T) arranged between the electroluminescent layers. The buffer layer is a bi-layer having an electron-transport layer (T2) and a hole-transport layer (T1), each one of the hole- and electron-transport layers being made of one or more materials in which the HOMO level(s) are comprised between or equal to the HOMO levels of the electroluminescent layers, and in which the LUMO levels are between or equal to the LUMO levels of said electroluminescent layers, with a tolerance of 0.3 eV.

Organic light-emitting diode comprising at least two electroluminescent layers

The invention relates to a polychromatic electronic display device with an electroluminescent screen, particularly with organic light-emitting diodes (OLEDs), wherein the polychromatic electronic display device comprises an electroluminescent emission surface and, towards the inside of the device, at least one substrate () coated with a pixel matrix, said device including a stack of a plurality of electroluminescent cells (Uand U) in which each pixel comprises at least three sub-pixels having different colours. According to the invention, for each pixel, the sub-pixel having the lowest emission wavelength &#x3bb;, or critical sub-pixel, is exclusively located in the external unit (U) adjacent to said emission surface, each of the other sub-pixels emitting at a wavelength higher than &#x3bb;being exclusively located in an internal unit (U) relative to said external unit and adjacent to the substrate, the surface area of this critical sub-pixel being higher than that of each of the other sub-pixels.

Polychromatic electronic display device with electroluminescent screen

The invention relates to an electronic display device having an electroluminescent screen and to its manufacturing method. This device includes a substrate () coated with a matrix of pixels, each pixel formed by an organic emitting structure () intermediate between two electrodes, one () near and the other () far, relative to the substrate respectively, an electrically insulating resin () covering the substrate between the respective near electrodes of the pixels and furthermore extending onto a peripheral edge () of each near electrode. Each pixel incorporates at least one auxiliary electrode () having a work function identical or substantially identical to that of the near electrode, and which extends inclinedly on the surface of the resin and facing said edge, from the near electrode towards the far electrode, so as to maximize the emission area of each pixel.

Electronic display device having an auxiliary electrode in each pixel region to maximize emission area and its fabrication process

The diode comprises: A high-yield diode is thus obtained in a particularly economical way.

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Grenoble, France

David Vaufrey