Applied Materials, Inc.

David V Adams

Roger N Anderson

Thomas E Deacon

Daniel L West

John G Martin

Russell Bowman

Douglas Meyer

A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.

Thermally processing semiconductor wafers at non-ambient pressures

A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.

Double-dome reactor for semiconductor processing

A quartz window for a wafer reactor vessel has a flat bow for withstanding the pressure differential between the ambient outside pressure and the reduced pressure in the wafer chamber. The bow is enhanced at elevated operating temperatures to compensate for the flattening effect of higher pressure differentials. The enhanced bowing is provided by a rigid peripheral flange which radially confines the window. The thermal expansion within the window is not expressed radially, but is directed outward to increase the bow.

Wafer reactor vessel window with pressure-thermal compensation

Pressure-resistant thermal reactor system for semiconductor processing

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San Jose, CA, United States of America

David V Adams