Lam Research Corporation

David Trussell

John Edward Daugherty

Richard Howard Gould

Felix Leib Kozakevich

Michael C Kellogg

Christopher J Pena

Klay Kunkel

Rajinder Dhindsa

James Rogers

Thorsten B Lill

Andreas Fischer

Peter K Loewenhardt

William S Kennedy

Mariusch Gregor

C Robert Koemtzopoulos

Alex Paterson

Anwar Husain

William Reid Harshbarger

Alan Jeffrey Miller

Dean R Denison

Raj Dhindsa

James H Rogers

A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

Wafer transport assembly with integrated buffers

A substrate processing tool includes a wafer transport assembly that includes a first wafer transport module and extends along a longitudinal axis of the substrate processing tool. A plurality of process modules includes a first process module and a second process module arranged on opposite sides of the longitudinal axis of the substrate processing tool. Outer sides of the first wafer transport module are coupled to the first and second process modules, respectively. A service tunnel defined below the wafer transport assembly extends along the longitudinal axis from a front end of the substrate processing tool to a rear end of the substrate processing tool below the wafer transport assembly.

A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. A replacement station is coupled to the second side of the isolation valve. The replacement station includes an exchange handler and a part buffer. The part buffer includes a plurality of compartments to hold new or used consumable parts. The process module includes a lift mechanism to enable placement of a consumable part installed in the process module to a raised position. The raised position provides access to the exchange handler to enable removal of the consumable part from the process module and store in a compartment of the part buffer. The exchange handler of the replacement station is configured to provide a replacement for the consumable part from the part buffer back to the process module. The lift mechanism is configured to receive the consumable part provided for replacement by the exchange handler and lower the consumable part to an installed position. The replacement by the exchange handler and the process module is conducted while the process module and the replacement station are maintained in a vacuum state.

Systems for removing and replacing consumable parts from a semiconductor process module in situ

An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.

Active showerhead

A wafer transport assembly includes a first wafer transport module and a second wafer transport module. A buffer module, arranged between the first wafer transport module and the second wafer transport module, includes a first buffer stack and a second buffer stack. Outer sides of the first wafer transport module are coupled to first and second process modules, respectively, and outer sides of the second wafer transport module are coupled to third and fourth process modules, respectively. The first wafer transport module, the second wafer transport module, and the buffer module define a continuous wafer transport volume providing a controlled environment within the wafer transport assembly.

A load lock assembly includes a first load lock connected between an equipment front end module (EFEM) and a wafer transport module, the EFEM being at a lab ambient condition, the wafer transport module being at a vacuum condition, the wafer transport module being part of a wafer transport assembly that is configured to transport wafers to and from one or more process modules that are connected to the wafer transport assembly; a second load lock disposed over the first load lock, the second load lock connected between the EFEM and the wafer transport module; a post-processing module disposed over the second load lock, the post-processing module configured for performing a post-processing operation on a processed wafer that has been processed in at least one of the process modules that are connected to the wafer transport assembly, the post-processing module being configured for connection to the wafer transport module.

Load lock interface and integrated post-processing module

A wafer transport assembly includes first and second wafer transport modules, and a buffer module coupled between the first and second wafer transport modules. The first and second wafer transport modules and the buffer module are aligned in a single directional axis. The buffer module includes a first buffer stack positioned at a first lateral end of the buffer module, and a second buffer stack positioned at a second lateral end of the buffer module. The first lateral end of the buffer module defines a first side protrusion nested between the first and second wafer transport modules and first and second process modules. The second lateral end of the buffer module defines a second side protrusion that is nested between the first and second wafer transport modules and third and fourth process modules. The first and second wafer transport modules and the buffer module define a continuous controlled environment.

A system for processing substrates is provided, comprising: a wafer transport assembly that is configured to transport wafers to and from one or more process modules, the wafer transport assembly having at least one wafer transport module, wherein lateral sides of the at least one wafer transport module are configured to couple to the one or more process modules; a service floor defined below the wafer transport assembly, the service floor being defined at a height that is less than a height of a fabrication facility floor in which the system is disposed.

Service tunnel for use on capital equipment in semiconductor manufacturing and research fabs

An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode

Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

Growing community of inventors

Fremont, CA, United States of America

David Trussell