Semileds Optoelectronics Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Semileds Corporation

David Trung Doan

Trung Tri Doan

Nobuaki Matsumoto

Yoshinori Ogawa

Chen-Fu Chu

Kazunori Kondo

Toshiyuki Ozai

Shuhei Ueda

Taichi Kitagawa

Kohei Otake

Yi-Feng Shih

Shih-Kai Chan

Keiji Ohori

Wen-Huang Liu

Feng-Hsu Fan

Chao-Chen Cheng

Hao-Chung Cheng

Yang Po Wen

A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and mounting additional devices on the desired circuitry to form a second circuitry level; performing the mounting step multiple times to form a plurality of electronic products that include the additional devices and the second circuitry level; and separating the LEDs from the carrier substrate and the temporary substrate.

Method for making light emitting device (LED) arrays and electronic products using a temporary substrate and a carrier substrate

A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

Light emitting diode (LED) structure having single epitaxial structure separated into light emitting zones

A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.

Method for making electronic device arrays using a temporary substrate

A method for transferring alignment marks between substrate systems includes providing a substrate having semiconductor devices and alignment marks in precise alignment with the semiconductor devices; and physically transferring and bonding the semiconductor devices and the alignment marks to a temporary substrate of a first substrate system. The method can also include physically transferring and bonding the semiconductor devices and the alignment marks to a mass transfer substrate of a second substrate system; and physically transferring and bonding the semiconductor devices and the alignment marks to a circuitry substrate of a third substrate system. A system for transferring alignment marks between substrate systems includes the substrate having the semiconductor devices and the alignment marks in precise alignment with the semiconductor devices. The system also includes the first substrate system, and can include the second substrate system and the third substrate system.

Method and system for transferring alignment marks between substrate systems

A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate

Method for fabricating (LED) dice using semiconductor structures on a substrate and laser lift-off to a receiving plate

Method for making electronic device arrays using a temporary substrate and a carrier substrate

Single light emitting diode (LED) structure having epitaxial structure separated into light emitting zones

Method for making light emitting device (LED) arrays using a temporary substrate and a carrier substrate

Single light emitting diode (LED) structure

Method for making light emitting device LED arrays

A light emitting diode (LED) device includes a substrate, a light emitting diode (LED) die mounted to the substrate configured to emit electromagnetic radiation, a lens covering the (LED) die, and a lens protective structure configured to protect the lens and a lens bonding layer from electromagnetic radiation emitted by the light emitting diode (LED) die and from reflected electromagnetic radiation within the lens. The lens protective structure can also be configured to reflect electromagnetic radiation increasing light extraction from the (LED) device. A method for fabricating the (LED) device includes the step of forming an opaque lens protective structure on the lens or on the lens bonding layer configured to protect the lens and the lens bonding layer from electromagnetic radiation emitted by the light emitting diode (LED) die and from reflected electromagnetic radiation within the lens.

Light emitting diode (LED) device having lens protective structure and method of fabrication

A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication

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Hsinchu County, Taiwan

David Trung Doan