University of Michigan

Arm Limited

Motorola Corporation

Freescale Semiconductor,inc.

International Business Machines Corporation

Other

The Regents of the Universtiy of Michigan

David Theodore Blaauw

Dennis Sylvester

Trevor N Mudge

Krisztian Flautner

Todd Austin

David Michael Bull

Dennis Michael Chen Sylvester

Joseph W Norton

Shidhartha Das

David Alan Fick

Sudhir Kumar Satpathy

Gregory Kengho Chen

Abhijit Dharchoudhury

Satyamurthy Pullela

Yoonmyung Lee

Larry G Jones

Scott McLean Hanson

Hun-Seok Kim

Sechang Oh

Joseph Francis Skovira

Robert L Maziasz

Rajendran Panda

Massimo Alioto

Ronald George Dreslinski, Jr

Nimish S Radia

Wanyeong Jung

Supreet Jeloka

Michael B Henry

Tim J Edwards

Taekwang Jang

Bharan Giridhar

Vladimir P Zolotov

Fakhruddin Ali Bohra

David D Wentzloff

Carlos Alfonso Tokunaga

Reetuparna Das

Xiao Wu

Qing Dong

Mohankumar Guruswamy

Steven M Martin

Chanhee Oh

Sandunmalee Nilmini Abeyratne

Yejoong Kim

Michael John Wieckowski

Nam S Kim

In Hee Lee

Supamas Sirichotiyakul

Timothy J Edwards

Myungjoon Choi

Mahmood Khayatzadeh

Li-Xuan Chuo

Kaiyuan Yang

Ronald George Dreslinski

Kyojin Choo

Matthew Rudolph Fojtik

Seok Hyeon Jeong

Ravindraraj Ramaraju

Stuart David Biles

Himanshu Kaul

Parameshwarappa Anand Kumar Savanth

David R Bearden

Brian Tracy Cline

Jae-Yoon Sim

Li Xu

Skylar Skrzyniarz

Laura E Fick

Fabrice Blanc

Rajat Chaudhry

Benjamin Kempke

Hun Seok Kim

Yao Shi

Peter Redmond O'Brien

Stephen C Moore

Cynthia Anne Chestek

Daniel Wesley Dulitz

Murat R Becer

Paras Patel

Mohan Guruswamy

Sanjay Pant

Aurobindo Dasgupta

Ilan Algor

Rafi Levy

Fu Cheng

Mingoo Seok

Jeongsup Lee

Mehdi Saligane

Zhiyoong Foo

Gyouho Kim

Judah L Adelman

David Moshe

Chin-Wei Hsu

Pradipto Mukherjee

Suyoung Bang

Gopalakrishnan Vijayan

Mingyu Yang

Susanta Misra

R Iris Bahar

Yen-po Chen

Inhee Lee

A motion sensing system uses high-voltage biasing to achieve high resolution with ultra-low power. The motion sensing system consists of a motion sensor, a readout circuit, and a high-voltage bias circuit to generate the optimized bias voltage for the motion sensor. By using the high-voltage bias, the signal from the motion sensor is raised above the readout circuit's noise floor, eliminating the power-hungry amplifier and signal-chopping used in conventional motion sensing systems. The bias circuit, while producing the programmable bias voltages for the motion sensor, also compensates for the process mismatch raised by the high voltage biases.

Ultra-low power readout circuit with high-voltage bias generation for MEMS accelerometer

A mote includes an optical receiver that wirelessly receives a power and data signal in form of NIR light energy within a patient and converts the NIR light energy to an electrical signal having a supply voltage. A control module supplies the supply voltage to power devices of the mote. A clock generation circuit locks onto a target clock frequency based on the power and data signal and generates clock signals. A data recovery circuit sets parameters of one of the devices based on the power and data signal and a first clock signal. An amplifier amplifies a neuron signal detected via an electrode inserted in tissue of the patient. A chip identifier module, based on a second clock signal, generates a recorded data signal based on a mote chip identifier and the neuron signal. A driver transmits the recorded data signal via a LED or a RF transmitter.

Wireless neural recording devices and system with two stage RF and NIR power delivery and programming

An amplifier is presented with a sample and average common mode feedback resistor. The amplifier circuit includes a feedback capacitor and a feedback resistor in parallel with the feedback capacitor, where the feedback capacitor and the feedback resistor form part of the negative feedback path for the amplifier. Of note, the feedback resistor is comprised of a low pass filter in series with a switched capacitor resistor, such that the low pass filter is electrically coupled to the output of the amplifier circuit and the switched capacitor resistor is electrically coupled to the inverting input of the amplifier circuit. The amplifier circuit further includes a control circuit interfaced with switches of the switched capacitor resistor. The high pass corner of the switched capacitor resistor is preferably lower than corner of the low pass filter.

Amplifier with sample and average common mode feedback resistor

When the ultra-low power mm-scale sensor node does not have a crystal oscillator and phase-lock loop, it inevitably exhibits significant carrier frequency offset (CFO) and sampling frequency offset (SFO) with respect to the reference frequencies in the gateway. This disclosure enables efficient real-time calculation of accurate SFO and CFO at the gateway, thus the ultra-low power mm-scale sensor node can be realized without a costly and bulky clock reference crystal and also power-hungry phase lock loop. In the proposed system, the crystal-less sensor starts transmission with repetitive RF pulses with a constant interval, followed by the data payload using pulse-position modulation (PPM). A proposed algorithm uses a two-dimensional (2D) fast Fourier transform (FFT) based process that identifies the SFO and CFO at the same time to establish successful wireless communication between the gateway and crystal-less sensor nodes.

Carrier and sampling frequency offset estimation for RF communication with crystal-less nodes

In a particular implementation, an apparatus to control clamping devices includes a first control circuit and a second control circuit. The first control circuit is responsive to a detection signal and generates a first drive signal to control a body diode of a clamping device. The second control circuit is responsive to the detection signal and generates a second drive signal to control the gate terminal of the clamping device.

Devices and methods to control clamping devices

A millimeter-scale Bluetooth low energy wireless transmitter is presented with a dual purpose loop antenna. The oscillator employs a high quality factor resonator formed by a printed 3.5&#xd7;3.5 mminductive loop antenna (simulated Q&#x2dc;110) and an on-chip digitally-switched capacitor array (simulated Q&#x2dc;283). The oscillator replaces the traditional voltage controlled oscillator plus power amplifier, achieving lower power consumption while maintaining phase noise of &#x2212;118.5 dBc/Hz at 1 MHz offset that results in low FSK modulation error (2.1%) and low frequency drift during BLE packet transmission.

Millimeter-scale bluetooth low energy transmitter with dual purpose loop antenna

A system is presented for non-line-of-sight localization between RF enabled devices. A transmitting node is configured to transmit an RF ranging signal at a first carrier frequency, where the RF ranging signal is modulated with a symbol. The reflecting node is configured to receive the RF ranging signal and further operates to convert the RF ranging signal to a second carrier frequency and retransmit the converted ranging signal while simultaneously receiving the RF ranging signal. The localizing node is configured to receive the converted ranging signal from the reflecting node. The localizing node operates to identify, in frequency domain, the symbol in the converted ranging signal and compute a distance between the reflecting node and the localizing node based in part on the identified symbol in the converted ranging signal. The transmitting node and the localizing node may be on the same or different devices.

Low-power, long-range RF localization system and method

An analog-to-digital converter (ADC) circuit is present, which is particularly suitable for use in an image sensor. The ADC circuit includes a comparator and a digital-to-analog converter (DAC) circuit. The DAC circuit includes two or more charge paths electrically coupled to the output node. Each charge path is formed by one or more charge-injection cells electrically coupled via a gain capacitor to the output node, and a charge conversion capacitor electrically coupled in parallel with the one or more charge-injection cells. Each charge-injection cell is configured to transfer a fixed amount of charge from a charge source to an associated charge path and includes at least one switch configured to isolate the charge source from the output node.

Analog-to-digital conversion circuit and image sensor including the same

An integrated circuit includes one or more portions having error detection and error correction circuits and which is operated with operating parameters giving finite non-zero error rate as well as one or more portions formed and operated to provide a zero error rate.

Error recovery within integrated circuit

Various implementations described herein are directed to a device having a charge pump and a capacitor. The charge pump may be configured for coupling between first and second power sources. The capacitor may be configured for coupling between the first power source and an input of the charge pump. In an energy harvest mode, the charge pump may decouple from the first and second power sources, and the first power source may charge the capacitor with a first voltage while the charge pump is decoupled from the first and second power sources. In an energy transfer mode, the charge pump may couple to the capacitor and the second power source to transfer the first voltage from the capacitor to the second power source during discharge of the first voltage from the capacitor.

Energy harvester

A wireless communication device is presented for use with a sensor. The wireless communication device includes: an antenna, a driver circuit and a bias circuit. The driver circuit is electrically coupled to the antenna and includes at least one pair of cross-coupled transistors. The bias circuit is electrically coupled to the driver circuit. In a transmit mode, the bias circuit biases the driver circuit with a first bias current. In response to the first bias current, the driver circuit oscillates the antenna. In a receive mode, the bias circuit biases the driver circuit with a second bias current, such that the first bias current differs from the second bias current. In response to the second bias current, the bias circuit amplifies a signal received by the antenna.

Low power high gain radio frequency amplifier for sensor apparatus

Subject matter disclosed herein may relate to arithmetic units of processors, and may relate more particularly to configurable arithmetic units. Configurable arithmetic units may comprise a plurality of basic units, and may further comprise a programmable fabric to selectively connect the plurality of basic units at least in part to process one or more sets of parameters in accordance with one or more specified arithmetic operations.

Configurable arithmetic unit

Various implementations described herein are directed to an integrated circuit. The integrated circuit may include clock circuitry having a first plurality of logic components arranged to receive a low voltage supply, a data input signal and a clock input signal and to provide a first plurality of intermediate signals and multiple intermediate clock signals. The integrated circuit may include level converter core circuitry having voltage biasing circuitry and voltage control circuitry arranged to receive a high voltage supply, the first plurality of intermediate signals and the multiple intermediate clock signals and to provide a second plurality of intermediate signals. The integrated circuit may include latch circuitry having a second plurality of logic components arranged to receive the high voltage supply, the low voltage supply and the second plurality of intermediate signals and to provide a data output signal.

Level converter circuitry

A sub-nW voltage reference is presented that provides inherently low process variation and enables trim-free operation for low-dropout regulators and other applications in nW microsystems. Sixty chips from three different wafers in 180 nm CMOS are measured, showing an untrimmed within-wafer &#x3c3;/&#x3bc; of 0.26% and wafer-to-wafer &#x3c3;/&#x3bc; of 1.9%. Measurement results also show a temperature coefficient of 48-124 ppm/&#xb0; C. from &#x2212;40&#xb0; C. to 85&#xb0; C. Outputting a 0.986V reference voltage, the reference operates down to 1.2V and consumes 114 pW at 25&#xb0; C.

Variation-tolerant voltage reference

Growing community of inventors

Ann Arbor, MI, United States of America

David Theodore Blaauw