Conexant Systems, Inc.

Skyworks Solutions, Inc.

Newport Fab, LLC

Avago Technologies Wireless IP (singapore) Pte. Ltd.

David T Young

Maureen R Brongo

Hadi H Abdul-Ridha

Bradley Paul Barber

Tony LoBianco

Shao-Wen Hsia

An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used.

Semiconductor seal ring and method of manufacture thereof

Semiconductor seal ring

A method for fabrication of ceramic tantalum nitride and improved structures based thereon is disclosed. According to the disclosed method, an ionized metal plasma (&ldquo;IMP&rdquo;) tool is used to create a plasma containing tantalum ions where the plasma is sustained by a mixture of nitrogen and argon gases. The percentage of nitrogen partial flow in the mixture of gases is adjusted so as to result in a layer of tantalum nitride with a nitrogen content of at least 30%. With a nitrogen content of at least 30%, the tantalum nitride becomes ceramic. The ceramic tantalum nitride presents a number of advantages. For example, the fabrication of ceramic tantalum nitride can be easily incorporated into fabrication of semiconductor chips using copper as the interconnect metal. Also, ceramic tantalum nitride can be used as an effective etch stop layer. The reason is that ceramic tantalum nitride does not react with fluoride which is a typical constituent of etchants utilized to etch silicon-based dielectrics such as silicon dioxide. Further, ceramic tantalum nitride can be used as a dielectric in fabrication of a capacitor stack using copper electrodes. Since fabrication of ceramic tantalum nitride is easily assimilated with fabrication of copper, the capacitor stack utilizing ceramic tantalum nitride can be built in a single IMP tool along with the copper electrodes. The result is higher throughput and a reduced risk of contaminating the semiconductor wafer since there is no need to &ldquo;break vacuum&rdquo; for a separate fabrication of the dielectric layer.

Structures based on ceramic tantalum nitride

A process for manufacturing a semiconductor device includes the formation of tungsten contact plugs suitable for very small geometry devices. As part of the process a tungsten barrier layer is deposited into vias and covering the walls of the vias by a process of ionized metal plasma deposition. The tungsten layer deposited in this manner provides a barrier layer, adhesion layer, and nucleation layer for the subsequent chemical vapor deposition of tungsten contact plug material. Together the two layers of tungsten form contact plugs having a low resistance even when used in the fabrication of very small geometry devices.

Semiconductor device and process

Method for fabrication of ceramic tantalum nitride and improved structures based thereon

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Irvine, CA, United States of America

David T Young