Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

David T Blahnik

Charles T Carlson

Robert Brent Vopat

Jason M Schaller

Frank Sinclair

Luke W Bonecutter

William Tyler Weaver

Benjamin B Riordon

Paul J Murphy

Paul E Pergande

Paul Benjamin Reuter

Costel Biloiu

Tuan Anh Nguyen

Amit Kumar Bansal

Michael Honan

Jeffrey Charles Blahnik

Morgan Evans

Juan Carlos Rocha

Douglas Brian Baumgarten

Aaron Webb

Ala Moradian

Wai-Ming Tam

Krag R Senior

Jun Ma

Sanjeev Baluja

Kartik Bhupendra Shah

Julian G Blake

Peter F Kurunczi

Timothy Joseph Franklin

Edward P Hammond

Kalyanjit Ghosh

Tejas Ulavi

Karuppasamy Muthukamatchi

Nitin Pathak

Jeff Hudgens

Luke Bonecutter

Embodiments presented herein are directed to radio frequency (RF) grounding in process chambers. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of a process chamber. The dielectric plate extends laterally into a volume defined by the chamber body and the lid. A substrate support is disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

Radio frequency power return path

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Linear accelerator assembly including flexible high-voltage connection

Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.

Processing chamber with annealing mini-environment

The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.

Baffle implementation for improving bottom purge gas flow uniformity

An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.

Resonator, linear accelerator configuration and ion implantation system having rotating exciter

Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

Robot for simultaneous substrate transfer

A coil inductor for use with a LINAC is disclosed. The coil inductor comprises one or more tubes, wherein each tube comprises an interior support structure to strengthen the tubes. By supporting the tube, the amount of vibration is reduced, allowing the coil to resonate at its natural frequency. In some embodiments, the interior structure comprises one or more interior walls. These interior walls may be used to create a plurality of fluid channels that allow the flow of coolant through the tubes. An end cap may be disposed on the second end of the tubes to allow fluid communication between the supply fluid channels and the return fluid channels. The first ends of the one or more tubes may be connected to a manifold that includes a supply port and a return port for the passage of coolant.

Stiffened RF LINAC coil inductor with internal support structure

Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

Resonator coil having an asymmetrical profile

An apparatus may include a drift tube assembly, arranged to transmit an ion beam. The drift tube assembly may include a first ground electrode; an RF drift tube assembly, disposed downstream of the first ground electrode; and a second ground electrode, disposed downstream of the RF drift tube assembly. The RF drift tube assembly may define a triple gap configuration. The apparatus may include a resonator, where the resonator comprises a toroidal coil, having a first end, connected to a first RF drift tube of the RF drift tube assembly, and a second end, connected to a second RF drift tube of the RF drift tube assembly.

Resonator, linear accelerator configuration and ion implantation system having toroidal resonator

Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

Ground path systems for providing a shorter and symmetrical ground path

A load port system includes an isolation compartment coupled to an equipment front end module (EFEM). Reactive gas is to be removed from the isolation compartment. The load port system further includes an elevator disposed in the isolation compartment. The elevator is coupled to an elevator arm that extends from the isolation compartment into the EFEM through an opening to raise and lower a carrier opener within the EFEM.

Systems, apparatus, and methods for an improved load port

Growing community of inventors

Round Rock, TX, United States of America

David T Blahnik