Creeled, Inc.

David Suich

Colin Kelly Blakely

Robert Wilcox

Michael Check

Arthur F Pun

Alexis Rile

Thomas Celano

Derek Miller

Kenneth Morgan Davis

Sarah Trinkle

Joseph G Sokol

Andre Pertuit

Peter Scott Andrews

Kevin Haberern

Sung Chul Joo

Steven Wuester

Jae-Hyung Park

Justin White

Samuel Richard Harrell, Jr

Daniel E Stasiw

F James Claire

Tucker McFarlane

Guy Pickett

Casey Lapoint

Light-emitting device package

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.

Sealing structures for light-emitting diode packages

Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Three dimensional LED device and method of manufacture

Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.

LED chips and devices with textured light-extracting portions, and fabrication methods

Light-emitting diode package

Lumiphoric materials and corresponding light-emitting devices, and more particularly localized surface plasmon resonance for enhanced photoluminescence of lumiphoric materials are disclosed. Plasmonic materials are disclosed that are configured to induce localized surface plasmon resonance and excite a corresponding localized surface plasmon enhanced electric field in response to incident light. An increase in photoluminescence of lumiphoric materials may be realized when the lumiphoric materials are arranged within the localized surface plasmon enhanced electric field. Plasmonic materials are disclosed that include various arrangements of nanoparticles and/or patterned structures with corresponding dielectric materials that are collectively arranged in close proximity to lumiphoric materials.

Localized surface plasmon resonance for enhanced photoluminescence of lumiphoric materials

Light-emitting diode (LED) packages, and more particularly broad electromagnetic spectrum LED packages are disclosed. Individual LED packages are disclosed that are capable of emitting various combinations of peak wavelengths across a broad electromagnetic spectrum, including one or more combinations of ultraviolet, visible, and infrared peak wavelengths. Such LED packages may also be broadly tunable across portions of the electromagnetic spectrum ranging from ultraviolet to infrared wavelengths. By providing such capabilities within a single light source provided by a single LED package, larger and more complex systems for broadband emissions that include multiple light sources, complex optical systems, mirrors, filters, and additional components may be avoided. LED chip arrangements, control schemes, and encapsulant arrangements are also disclosed for such broad electromagnetic spectrum LED packages.

Broad electromagnetic spectrum light-emitting diode packages

Submount structures for light-emitting diode (LED) packages are provided. Submounts may include a base material that is configured to provide high thermal conductivity and a ceramic layer on the base material that is configured to provide high reflectivity for one or more LED chips that are mounted thereon. In certain aspects, the base material may include a ceramic base having a ceramic material that is different than a material of the ceramic layer. In certain aspects, submounts may also include additional ceramic layers configured to provide high reflectivity. In certain aspects, LED packages include electrical traces that are arranged either on one or more ceramic layers or at least partially embedded within one or more ceramic layers. The arrangement of such ceramic layers may provide increased reflectivity in areas where it may be difficult for other reflective materials to be present, such as gaps formed between tightly spaced electrical traces.

Submount structures for light emitting diode packages

Light-emitting diode (LED) arrays, and more particularly high power LED arrays and related devices are disclosed. Exemplary lighting devices with arrangements of LED chips and/or lumiphoric materials are capable of dynamically providing different color points and/or light outputs. Devices include individually controllable LED chips arranged on a common submount that may include integrated control circuitry for controlling operation of the LED chips. LED chips may be arranged to form sub-arrays of like-colored LED chips and corresponding electrical connections may include one or more shared electrical contacts. Certain aspects relate to arrangements where electrical connections are provided on opposite faces of submounts from the LED chips such that an increased density of LED chips may be arranged along primary emission faces. Applications for such high-power LED arrays and related devices include various color-changing lighting fixtures with high light output that may benefit from dynamic spectral tuning with improved precision.

High power light-emitting diode arrays and related devices

Light-emitting diodes (LEDs), LED arrays, and related devices are disclosed. An LED device includes a first LED chip and a second LED chip mounted on a submount with a light-altering material in between. The light-altering material may include at least one of a light-reflective material and/or a light-absorbing material. Individual wavelength conversion elements may be arranged on each of the first and second LED chips. The light-altering material may improve the contrast between the first and second LED chips as well as between the individual wavelength conversion elements. LED devices may include submounts in modular configurations where LED chips may be mounted on adjacent submounts to form an LED array. Each LED chip of the LED array may be laterally separated from at least one other LED chip by a same distance and a light-altering material may be arranged around the LED array.

Light-emitting diodes, light-emitting diode arrays and related devices

Light-emitting diodes (LEDs), LED arrays, and related devices are disclosed. An LED device includes a first LED chip and a second LED chip mounted on a submount with a light-altering material in between. The light-altering material may include at least one of a light-reflective material and/or a light-absorbing material. Individual wavelength conversion elements may be arranged on each of the first and second LED chips. The light-altering material may improve the contrast between the first and second LED chips as well as between the individual wavelength conversion elements. The light-altering material may include at least one of nanoparticles, nanowires, mesowires, or combinations thereof. LED devices may include submounts in modular configurations where LED chips may be mounted on adjacent submounts to form an LED array.

Lumiphoric material region arrangements are provided for light-emitting diode (LED) packages. Certain aspects relate to arrangements of light-altering materials and lumiphoric material regions for LED packages. Lumiphoric material regions over corresponding LED chips may include increased sizes relative to overall LED package dimensions. Lumiphoric material regions may be arranged to extend to certain peripheral edges of an LED package. Multiple lumiphoric material regions and corresponding LED chips may be arranged in close proximity to one another to provide LED packages with multiple and selectable illumination characteristics. Light-altering materials may be arranged that at least partially define certain peripheral edges of lumiphoric material regions. The light-altering materials may form one or more nonintersecting segments arranged about the lumiphoric material regions. Certain aspects relate to LED packages having one or more of reduced sizes, increased light output, and reduced fabrication steps.

Growing community of inventors

Durham, NC, United States of America

David Suich