International Business Machines Corporation

Government of the United States of America, As Represented by the Secretary of Commerce

Quantum Devices, Inc.

David S Wisbey

Peter A Dowben

Mary Beth Rothwell

Matthias Steffen

George Andrew Keefe

Antonio D Corcoles Gonzalez

Chang Chyi Tsuei

David P Pappas

Jiansong Gao

Jinke Tang

Dustin A Hite

Michael R Vissers

Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.

Low-loss superconducting devices

Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO, Gd-doped EuO, Gd-doped GaN, GdOand GdN are included in three types of device structures: (1) a p-n heterostructure diode with a &#x2dc;30 &#x3bc;m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting LiBOlayer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.

Neutron detection using GD-loaded oxide and nitride heterojunction diodes

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Lafayette, CO, United States of America

David S Wisbey